MBR10H100CT-E3/45 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - MBR10H100CT-E3/45 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - MBR10H100CT-E3/45
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 760 mV @ 5 A | |
Voltage - DC Reverse (Vr) (Max) | 100 V | |
Technologie | Schottky | |
Supplier Device Package | TO-220-3 | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Package / Case | TO-220-3 |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tube | |
Operatiounstemperatur - Junction | -65°C ~ 175°C | |
Mounting Type | Through Hole | |
Diode Configuration | 1 Pair Common Cathode | |
Aktuell - Reverse Leakage @ Vr | 3.5 µA @ 100 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 5A | |
Basis Produktnummer | MBR10 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | MBR10H100CT-E3/45 | MBR10H150CT_T0_00001 | MBR10H150CT | MBR10H100CTG |
Hiersteller | Vishay General Semiconductor - Diodes Division | Panjit International Inc. | Taiwan Semiconductor Corporation | onsemi |
Voltage - Viru (Vf) (Max) @ Wann | 760 mV @ 5 A | 850 mV @ 5 A | 970 mV @ 10 A | 730 mV @ 5 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Supplier Device Package | TO-220-3 | TO-220AB | TO-220AB | TO-220 |
Operatiounstemperatur - Junction | -65°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | 175°C (Max) |
Voltage - DC Reverse (Vr) (Max) | 100 V | 150 V | 150 V | 100 V |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 5A | 5A | 10A | 5A |
Technologie | Schottky | Schottky | Schottky | Schottky |
Basis Produktnummer | MBR10 | MBR10 | MBR10 | MBR10 |
Package protegéieren | Tube | Tube | Tube | Tube |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Serie | - | MBR10H150CT | - | SWITCHMODE™ |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Aktuell - Reverse Leakage @ Vr | 3.5 µA @ 100 V | 500 nA @ 150 V | 5 µA @ 150 V | 3.5 µA @ 100 V |
Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
Eroflueden MBR10H100CT-E3/45 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir MBR10H100CT-E3/45 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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