MBR10H100CT Tech Spezifikatioune
onsemi - MBR10H100CT technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MBR10H100CT
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 730 mV @ 5 A | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Schottky | |
| Supplier Device Package | TO-220 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | SWITCHMODE™ | |
| Package / Case | TO-220-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | 175°C (Max) | |
| Mounting Type | Through Hole | |
| Diode Configuration | 1 Pair Common Cathode | |
| Aktuell - Reverse Leakage @ Vr | 3.5 µA @ 100 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 5A | |
| Basis Produktnummer | MBR10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MBR10H100CT.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | MBR10H100CT | MBR10H100CT | MBR10H150CT_T0_00001 | MBR10H100CT-E3/45 |
| Hiersteller | onsemi | Taiwan Semiconductor Corporation | Panjit International Inc. | Vishay General Semiconductor - Diodes Division |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Aktuell - Reverse Leakage @ Vr | 3.5 µA @ 100 V | 5 µA @ 100 V | 500 nA @ 150 V | 3.5 µA @ 100 V |
| Serie | SWITCHMODE™ | - | MBR10H150CT | - |
| Basis Produktnummer | MBR10 | MBR10 | MBR10 | MBR10 |
| Operatiounstemperatur - Junction | 175°C (Max) | -55°C ~ 175°C | -55°C ~ 175°C | -65°C ~ 175°C |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 150 V | 100 V |
| Supplier Device Package | TO-220 | TO-220AB | TO-220AB | TO-220-3 |
| Voltage - Viru (Vf) (Max) @ Wann | 730 mV @ 5 A | 950 mV @ 10 A | 850 mV @ 5 A | 760 mV @ 5 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 5A | 10A | 5A | 5A |
Eroflueden MBR10H100CT PDF DataDhusts an onsemi Dokumentatioun fir MBR10H100CT - onsemi.
MBR1080GONsemiMBR1090onsemiDIODE SCHOTTKY 90V 10A TO220-2MBR10H100CTTaiwan Semiconductor CorporationDIODE ARRAY SCHOTTKY 100V TO220MBR10H150CT_T0_00001Panjit International Inc.ULTRA LOW IR SCHOTTKY BARRIER REMBR1090GonsemiDIODE SCHOTTKY 90V 10A TO220-2MBR10B100FCTHSIRECTMBR10H100CT-E3/45Vishay General Semiconductor - Diodes DivisionDIODE ARRAY SCHOTTKY 100V TO220MBR10H100CTGonsemiDIODE ARRAY SCHOTTKY 100V TO220MBR10H150CT-E3/45Vishay General Semiconductor - Diodes DivisionDIODE ARRAY SCHOTTKY 150V TO220MBR10H150CTTaiwan Semiconductor CorporationDIODE SCHOTTKY 150V 10A TO220ABmbr10b150fcthSIRECTMBR10H150FCTMBR10B100FCTH,10100SIAECT
MBR10H100-E3/45Vishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 100V 10A TO220ACMBR10H200CTTaiwan Semiconductor CorporationDIODE SCHOTTKY 200V 10A TO220AB
MBR10H200CT-E3/45Electro-Films (EFI) / VishayMBR1090CTMBR1090FCT| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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