1N5418TR Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - 1N5418TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - 1N5418TR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 9 A | |
Voltage - DC Reverse (Vr) (Max) | 400 V | |
Technologie | Avalanche | |
Supplier Device Package | SOD-64 | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Reverse Recovery Time (trr) | 100 ns |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | SOD-64, Axial | |
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -55°C ~ 175°C | |
Mounting Type | Through Hole | |
Aktuell - Reverse Leakage @ Vr | 1 µA @ 400 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
Capacitance @ Vr, F. | - | |
Basis Produktnummer | 1N5418 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division 1N5418TR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | 1N5418TR | 1N5551 | 1N5416 | 1N5551 |
Hiersteller | Vishay General Semiconductor - Diodes Division | Solid State Inc. | Microchip Technology | Microchip Technology |
Package protegéieren | Tape & Reel (TR) | Box | Bulk | Bulk |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 9 A | 1 V @ 3 A | 1.5 V @ 9 A | 1.2 V @ 9 A |
Technologie | Avalanche | Standard | Standard | Standard |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | 3A |
Serie | - | - | - | - |
Reverse Recovery Time (trr) | 100 ns | 2 µs | 150 ns | 2 µs |
Aktuell - Reverse Leakage @ Vr | 1 µA @ 400 V | 1 µA @ 400 V | 1 µA @ 100 V | 1 µA @ 400 V |
Supplier Device Package | SOD-64 | Axial | B, Axial | B, Axial |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Capacitance @ Vr, F. | - | 120pF @ 12V, 1MHz | - | - |
Operatiounstemperatur - Junction | -55°C ~ 175°C | -65°C ~ 200°C | -65°C ~ 175°C | -65°C ~ 175°C |
Basis Produktnummer | 1N5418 | - | 1N5416 | 1N5551 |
Voltage - DC Reverse (Vr) (Max) | 400 V | 400 V | 100 V | 400 V |
Package / Case | SOD-64, Axial | Axial | B, Axial | B, Axial |
Eroflueden 1N5418TR PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir 1N5418TR - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.