1N5418US Tech Spezifikatioune
Microchip Technology - 1N5418US technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - 1N5418US
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 9 A | |
| Voltage - DC Reverse (Vr) (Max) | 400 V | |
| Technologie | Standard | |
| Supplier Device Package | D-5B | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 150 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | SQ-MELF, E | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 1 µA @ 400 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | 1N5418 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology 1N5418US.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | 1N5418US | 1N5416 | 1N5551 | 1N5551 |
| Hiersteller | Microchip Technology | Microchip Technology | Solid State Inc. | Microchip Technology |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | 3A |
| Basis Produktnummer | 1N5418 | 1N5416 | - | 1N5551 |
| Package protegéieren | Bulk | Bulk | Box | Bulk |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 200°C | -65°C ~ 175°C |
| Reverse Recovery Time (trr) | 150 ns | 150 ns | 2 µs | 2 µs |
| Package / Case | SQ-MELF, E | B, Axial | Axial | B, Axial |
| Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 9 A | 1.5 V @ 9 A | 1 V @ 3 A | 1.2 V @ 9 A |
| Capacitance @ Vr, F. | - | - | 120pF @ 12V, 1MHz | - |
| Serie | - | - | - | - |
| Supplier Device Package | D-5B | B, Axial | Axial | B, Axial |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Mounting Type | Surface Mount | Through Hole | Through Hole | Through Hole |
| Technologie | Standard | Standard | Standard | Standard |
| Aktuell - Reverse Leakage @ Vr | 1 µA @ 400 V | 1 µA @ 100 V | 1 µA @ 400 V | 1 µA @ 400 V |
| Voltage - DC Reverse (Vr) (Max) | 400 V | 100 V | 400 V | 400 V |
Eroflueden 1N5418US PDF DataDhusts an Microchip Technology Dokumentatioun fir 1N5418US - Microchip Technology.
1N5416Microchip TechnologyDIODE GEN PURP 100V 3A AXIAL1N5551Solid State Inc.DIODE GEN PURP 400V 3A AXIAL1N5551Microchip TechnologyDIODE GEN PURP 400V 3A AXIAL
1N5523BMicrochip TechnologyZENER DIODE
1N5450BAMI Semiconductor/onsemi
1N5525BUR-1Microchip TechnologyZENER DIODE1N5409RIRIGBT Module1N5418Microchip TechnologyDIODE GEN PURP 400V 3A B SQ-MELF1N540GGAMI Semiconductor/onsemi
1N5418TRVishay General Semiconductor - Diodes DivisionDIODE AVALANCHE 400V 3A SOD641N5408_AY_10001-PECPANJIT
1N5448AMicro Connectors, Inc.1N5552Solid State Inc.DIODE GEN PURP 600V 3A AXIAL1N5524BMicrochip TechnologyDIODE ZENER1N5417-TAPVishay General Semiconductor - Diodes DivisionDIODE AVALANCHE 200V 3A SOD641N5521BMicrochip TechnologyDIODE ZENER1N5418JANTXAKK
1N5417-E3/54Electro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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