US1G R3G Tech Spezifikatioune
Taiwan Semiconductor Corporation - US1G R3G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - US1G R3G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 400 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-214AC (SMA) | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 50 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-214AC, SMA | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 400 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | 15pF @ 4V, 1MHz | |
| Basis Produktnummer | US1G |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation US1G R3G.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | US1G R3G | US1DFA | US1G-E3/61T | US1G-13-F |
| Hiersteller | Taiwan Semiconductor Corporation | onsemi | Vishay General Semiconductor - Diodes Division | Diodes Incorporated |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -65°C ~ 150°C |
| Serie | - | - | - | - |
| Voltage - DC Reverse (Vr) (Max) | 400 V | 200 V | 400 V | 400 V |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 400 V | 5 µA @ 200 V | 10 µA @ 400 V | 5 µA @ 400 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Basis Produktnummer | US1G | US1D | US1 | US1G |
| Supplier Device Package | DO-214AC (SMA) | SOD-123FA | DO-214AC (SMA) | SMA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Capacitance @ Vr, F. | 15pF @ 4V, 1MHz | 20pF @ 4V, 1MHz | 15pF @ 4V, 1MHz | 20pF @ 4V, 1MHz |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA | SOD-123W | DO-214AC, SMA | DO-214AC, SMA |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
| Reverse Recovery Time (trr) | 50 ns | 50 ns | 50 ns | 50 ns |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 1 A | 950 mV @ 1 A | 1 V @ 1 A | 1.3 V @ 1 A |
| Technologie | Standard | Standard | Standard | Standard |
Eroflueden US1G R3G PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir US1G R3G - Taiwan Semiconductor Corporation.
US1DFAonsemiDIODE GEN PURP 200V 1A SOD123FA
US1G R3Taiwan Semiconductor
US1GHE3Electro-Films (EFI) / Vishay
US1D_R1PANJITUS1G-E3/61TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 1A DO214ACUS1G-13-FDiodes IncorporatedDIODE GEN PURP 400V 1A SMAUS1DWG_R1PANJITUS1DWZT/RPANJITUS1G-M3/61TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 1A DO214AC
US1DWF-7Diodes IncorporatedDIODE GEN PURP 200V 1A SOD123FUS1FFAonsemiDIODE GEN PURP 300V 1A SOD123FAUS1G-E3VISHAYMAS
US1D_R1_00001Panjit International Inc.DIODE GEN PURP 200V 1A SMAUS1G 2K/RUS1G-E3/5ATVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 1A DO214ACUS1G/61TElectro-Films (EFI) / VishayUS1GFAonsemiDIODE GEN PURP 400V 1A SOD123FLUS1G T/RPANJIT| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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