US1DWF-7 Tech Spezifikatioune
Diodes Incorporated - US1DWF-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - US1DWF-7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard | |
| Supplier Device Package | SOD-123F | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | Automotive, AEC-Q101 | |
| Reverse Recovery Time (trr) | 35 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | SOD-123F | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | 14pF @ 4V, 1MHz | |
| Basis Produktnummer | US1D |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated US1DWF-7.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | US1DWF-7 | US1D-TP | US1FFA | US1DFA |
| Hiersteller | Diodes Incorporated | Micro Commercial Co | onsemi | onsemi |
| Supplier Device Package | SOD-123F | DO-214AC (SMA) | SOD-123FA | SOD-123FA |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200 V | 300 V | 200 V |
| Serie | Automotive, AEC-Q101 | - | - | - |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -65°C ~ 175°C | -55°C ~ 150°C | -55°C ~ 150°C |
| Basis Produktnummer | US1D | US1D | US1F | US1D |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
| Package / Case | SOD-123F | DO-214AC, SMA | SOD-123W | SOD-123W |
| Reverse Recovery Time (trr) | 35 ns | 50 ns | 50 ns | 50 ns |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Capacitance @ Vr, F. | 14pF @ 4V, 1MHz | 20pF @ 4V, 1MHz | 20pF @ 4V, 1MHz | 20pF @ 4V, 1MHz |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 200 V | 10 µA @ 200 V | 5 µA @ 300 V | 5 µA @ 200 V |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 1 A | 1 V @ 1 A | 950 mV @ 1 A | 950 mV @ 1 A |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Technologie | Standard | Standard | Standard | Standard |
Eroflueden US1DWF-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir US1DWF-7 - Diodes Incorporated.
US1D R3Taiwan SemiconductorUS1G R3Taiwan SemiconductorUS1D-TPMicro Commercial CoDIODE GEN PURP 200V 1A DO214ACUS1G 2K/RUS1FFAonsemiDIODE GEN PURP 300V 1A SOD123FAUS1D_R1PANJITUS1DFAonsemiDIODE GEN PURP 200V 1A SOD123FA
US1D-M3/61TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 1A DO214ACUS1DWG_R1PANJITUS1D T/RPANJIT
US1D_R1_00001Panjit International Inc.DIODE GEN PURP 200V 1A SMAUS1D-FFORMOSAUS1G T/RPANJIT
US1D-13-FDiodes IncorporatedDIODE GEN PURP 200V 1A SMAUS1DWZT/RPANJIT
US1G R3GTaiwan Semiconductor CorporationDIODE GEN PURP 400V 1A DO214ACUS1D-E3/61TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 1A DO214AC
US1D-E3Electro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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