UR2KB80 Tech Spezifikatioune
Taiwan Semiconductor Corporation - UR2KB80 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - UR2KB80
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Voltage - Peak Reverse (Max) | 800 V | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.05 V @ 1 A | |
| Technologie | Standard | |
| Supplier Device Package | D3K | |
| Serie | - | |
| Package / Case | 4-ESIP |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 800 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 2 A | |
| Basis Produktnummer | UR2KB |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation UR2KB80.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | UR2KB80 | GBPC3510 | M50100TB1000 | BU1006-E3/45 |
| Hiersteller | Taiwan Semiconductor Corporation | onsemi | Sensata-Crydom | Vishay General Semiconductor - Diodes Division |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 2 A | 35 A | 100 A | 3.2 A |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 800 V | 5 µA @ 1000 V | - | 5 µA @ 600 V |
| Basis Produktnummer | UR2KB | GBPC35 | M50100 | BU1006 |
| Serie | - | - | - | - |
| Voltage - Peak Reverse (Max) | 800 V | 1 kV | 1 kV | 600 V |
| Technologie | Standard | Standard | Standard | Standard |
| Package / Case | 4-ESIP | 4-Square, GBPC | Module | 4-SIP, BU |
| Package protegéieren | Tube | Bulk | Bulk | Tube |
| Mounting Type | Through Hole | QC Terminal | Chassis Mount | Through Hole |
| Diode Type | Single Phase | Single Phase | Three Phase | Single Phase |
| Voltage - Viru (Vf) (Max) @ Wann | 1.05 V @ 1 A | 1.1 V @ 17.5 A | 1.2 V @ 100 A | 1.05 V @ 5 A |
| Supplier Device Package | D3K | GBPC | Module | isoCINK+™ BU |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 125°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden UR2KB80 PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir UR2KB80 - Taiwan Semiconductor Corporation.
GBPC3510onsemiBRIDGE RECT 1PHASE 1KV 35A GBPCUR233L-18-AAR-A-RUTCM50100TB1000Sensata-CrydomBRIDGE RECT 3P 1KV 100A MODULEUR233-3.3V-AUTCBU1006-E3/45Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1P 600V 3.2A BU
VUO98-12NO7IXYSBRIDGE RECT 3P 1.2KV ECO-PAC2
GBJ804Diodes IncorporatedBRIDGE RECT 1PHASE 400V 8A GBJ
UR2KB60Taiwan Semiconductor Corporation2A, 600V, STANDARD BRIDGE RECTIF
VS-36MT60Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 3PHASE 600V 35A D-63UR233L-33-AA3-AUTC
MBL110S-M3/IVishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 1KV 1A 4SMD
KBJ608GDiodes IncorporatedBRIDGE RECT 1PHASE 800V 6A KBJUR233L-1.8-BUTC
VUO25-16NO8IXYSBRIDGE RECT 3P 1.6KV 25A PWS-E1
CDBHD240-GComchip TechnologyBRIDGE RECT 1P 40V 2A MINI-DIP
UR230Z116WADI (Analog Devices, Inc.)
VUO160-14NO7IXYSBRIDGE RECT 3P 1.4KV 175A PWS-E1
DF06MA-E3/45Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 600V 1A DFM| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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