GBPC3510 Tech Spezifikatioune
onsemi - GBPC3510 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - GBPC3510
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Peak Reverse (Max) | 1 kV | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 17.5 A | |
| Technologie | Standard | |
| Supplier Device Package | GBPC | |
| Serie | - | |
| Package / Case | 4-Square, GBPC |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | QC Terminal | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 35 A | |
| Basis Produktnummer | GBPC35 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi GBPC3510.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | GBPC3510 | GBPC3510 | GBPC3510 | GBPC3508W |
| Hiersteller | onsemi | SMC Diode Solutions | Fairchild Semiconductor | Yangzhou Yangjie Electronic Technology Co.,Ltd |
| Supplier Device Package | GBPC | GBPC | GBPC | GBPC-W |
| Package protegéieren | Bulk | Bulk | Bulk | Box |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 35 A | 35 A | 35 A | 35 A |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | - | - | - | - |
| Basis Produktnummer | GBPC35 | GBPC3510 | GBPC35 | - |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | 5 µA @ 1000 V | 5 µA @ 1 V | 10 µA @ 800 V |
| Technologie | Standard | Standard | Standard | Standard |
| Voltage - Peak Reverse (Max) | 1 kV | 1 kV | 1 kV | 800 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 17.5 A | 1.1 V @ 17.5 A | 1.1 V @ 17.5 A | 1.1 V @ 17.5 A |
| Package / Case | 4-Square, GBPC | 4-Square, GBPC | 4-Square, GBPC | 4-Square, GBPC-W |
| Mounting Type | QC Terminal | QC Terminal | Chassis Mount | Through Hole |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
Eroflueden GBPC3510 PDF DataDhusts an onsemi Dokumentatioun fir GBPC3510 - onsemi.
GBPC3510SMC Diode SolutionsBRIDGE RECT 1PHASE 1KV 35A GBPCGBPC3510Fairchild SemiconductorBRIDGE RECTIFIER DIODE, 1 PHASE,GBPC3508WYangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 800V 35A GBPCW-G
GBPC3510Diodes IncorporatedBRIDGE RECT 1PHASE 1V 35A GBPC
GBPC3508-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 800V 35A GBPC
GBPC3510-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 1KV 35A GBPC
GBPC3508WTaiwan Semiconductor Corporation35A, 800V, STANDARD BRIDGE RECTI
GBPC3508WFairchild SemiconductorBRIDGE RECTIFIER DIODE, 1 PHASE,
GBPC3510WSURGE35A -1000V - GBPC-W - BRIDGE
GBPC3510AMICIGBT ModuleGBPC3510Taiwan Semiconductor Corporation35A, 1000V, STANDARD BRIDGE RECT
GBPC3510Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 1000V 35A GBPCGBPC3508WDiodes IncorporatedBRIDGE RECT 1PH 800V 35A GBPC-WGBPC3510WTaiwan Semiconductor Corporation35A, 1000V, STANDARD BRIDGE RECT
GBPC3508WonsemiBRIDGE RECT 1P 800V 35A GBPC-W
GBPC3508WSMC Diode SolutionsBRIDGE RECT 1P 800V 35A GBPC-W
GBPC3510SURGE35A -1000V - GBPC - BRIDGE
GBPC3508WGeneSiC SemiconductorBRIDGE RECT 1P 800V 35A GBPC-W| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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