TSM900N06CW RPG Tech Spezifikatioune
Taiwan Semiconductor Corporation - TSM900N06CW RPG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - TSM900N06CW RPG
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-223 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 6A, 10V | |
| Power Dissipation (Max) | 4.17W (Tc) | |
| Package / Case | TO-261-4, TO-261AA | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | |
| Basis Produktnummer | TSM900 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation TSM900N06CW RPG.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | TSM900N06CW RPG | TSM850N06CX RFG | TSM80N950CP | TSM80N1R2CP |
| Hiersteller | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (Max) | ±20V | ±20V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 15 V | 529 pF @ 30 V | 691 pF @ 100 V | 685 pF @ 100 V |
| Supplier Device Package | SOT-223 | SOT-23 | TO-252, (D-Pak) | TO-252, (D-Pak) |
| Basis Produktnummer | TSM900 | TSM850 | TSM80 | TSM80 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | 3A (Tc) | 6A (Tc) | 5.5A (Tc) |
| Power Dissipation (Max) | 4.17W (Tc) | 1.7W (Tc) | 110W (Tc) | 110W (Tc) |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 800 V | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V | 9.5 nC @ 10 V | 19.6 nC @ 10 V | 19.4 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 6A, 10V | 85mOhm @ 2.3A, 10V | 950mOhm @ 3A, 10V | 1.2Ohm @ 2.75A, 10V |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 10V | 10V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package / Case | TO-261-4, TO-261AA | TO-236-3, SC-59, SOT-23-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Serie | - | - | - | - |
Eroflueden TSM900N06CW RPG PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir TSM900N06CW RPG - Taiwan Semiconductor Corporation.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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