TSM80N950CP Tech Spezifikatioune
Taiwan Semiconductor Corporation - TSM80N950CP technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - TSM80N950CP
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Taiwan Semiconductor | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252, (D-Pak) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 950mOhm @ 3A, 10V | |
Power Dissipation (Max) | 110W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 691 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 19.6 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 800 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Tc) | |
Basis Produktnummer | TSM80 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation TSM80N950CP.
Produktiounsattriff | ||||
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Part Number | TSM80N950CP | TSM900N10CP | TSM900N06CH | TSM900N06CW RPG |
Hiersteller | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Vgs (Max) | ±30V | ±20V | ±20V | ±20V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 950mOhm @ 3A, 10V | 90mOhm @ 5A, 10V | 90mOhm @ 6A, 10V | 90mOhm @ 6A, 10V |
Basis Produktnummer | TSM80 | TSM900 | TSM900 | TSM900 |
Gate Charge (Qg) (Max) @ Vgs | 19.6 nC @ 10 V | 9.3 nC @ 10 V | 9.3 nC @ 10 V | 9.3 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 691 pF @ 100 V | 1480 pF @ 50 V | 500 pF @ 15 V | 500 pF @ 15 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-251-3 Stub Leads, IPak | TO-261-4, TO-261AA |
Serie | - | - | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Entworf fir Source Voltage (Vdss) | 800 V | 100 V | 60 V | 60 V |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) | TO-252, (D-Pak) | TO-251S (I-PAK SL) | SOT-223 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Tc) | 15A (Tc) | 11A (Tc) | 11A (Tc) |
Power Dissipation (Max) | 110W (Tc) | 50W (Tc) | 25W (Tc) | 4.17W (Tc) |
Eroflueden TSM80N950CP PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir TSM80N950CP - Taiwan Semiconductor Corporation.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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