TSM4NB60CP Tech Spezifikatioune
Taiwan Semiconductor Corporation - TSM4NB60CP technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - TSM4NB60CP
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Taiwan Semiconductor | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252, (D-Pak) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2A, 10V | |
Power Dissipation (Max) | 50W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | |
Basis Produktnummer | TSM4 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation TSM4NB60CP.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | TSM4NB60CP | TSM4NB60CI | TSM4NB65CH | TSM4NC50CP |
Hiersteller | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
Supplier Device Package | TO-252, (D-Pak) | ITO-220 | TO-251 (IPAK) | TO-252, (D-Pak) |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 650 V | 500 V |
Vgs (Max) | ±30V | ±30V | ±30V | ±20V |
Power Dissipation (Max) | 50W (Tc) | 25W (Tc) | 50W (Tc) | 83W (Tc) |
Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2A, 10V | 2.5Ohm @ 2A, 10V | 3.37Ohm @ 2A, 10V | 2.7Ohm @ 1.7A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Serie | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V | 14.5 nC @ 10 V | 13.46 nC @ 10 V | 12 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V | 500 pF @ 25 V | 549 pF @ 25 V | 453 pF @ 50 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | TSM4 | TSM4 | TSM4 | TSM4 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 4.5V @ 250µA | 4.5V @ 250µA | 3V @ 250µA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-3 Full Pack, Isolated Tab | TO-251-3 Short Leads, IPak, TO-251AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
FET Feature | - | - | - | - |
Package protegéieren | Tape & Reel (TR) | Tube | Tube | Tape & Reel (TR) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | 4A (Tc) | 4A (Tc) | 4A (Tc) |
Mounting Type | Surface Mount | Through Hole | Through Hole | Surface Mount |
Eroflueden TSM4NB60CP PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir TSM4NB60CP - Taiwan Semiconductor Corporation.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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