TSM4NB60CI Tech Spezifikatioune
Taiwan Semiconductor Corporation - TSM4NB60CI technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - TSM4NB60CI
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | ITO-220 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2A, 10V | |
| Power Dissipation (Max) | 25W (Tc) | |
| Package / Case | TO-220-3 Full Pack, Isolated Tab | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | |
| Basis Produktnummer | TSM4 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation TSM4NB60CI.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | TSM4NB60CI | TSM4NB60CP | TSM4NB65CH | TSM4NC50CP |
| Hiersteller | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
| Vgs (th) (Max) @ Id | 4.5V @ 250µA | 4.5V @ 250µA | 4.5V @ 250µA | 3V @ 250µA |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V | 500 pF @ 25 V | 549 pF @ 25 V | 453 pF @ 50 V |
| FET Feature | - | - | - | - |
| Basis Produktnummer | TSM4 | TSM4 | TSM4 | TSM4 |
| Package / Case | TO-220-3 Full Pack, Isolated Tab | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-251-3 Short Leads, IPak, TO-251AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2A, 10V | 2.5Ohm @ 2A, 10V | 3.37Ohm @ 2A, 10V | 2.7Ohm @ 1.7A, 10V |
| Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 650 V | 500 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V | 14.5 nC @ 10 V | 13.46 nC @ 10 V | 12 nC @ 10 V |
| Power Dissipation (Max) | 25W (Tc) | 50W (Tc) | 50W (Tc) | 83W (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Serie | - | - | - | - |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Surface Mount |
| Package protegéieren | Tube | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | 4A (Tc) | 4A (Tc) | 4A (Tc) |
| Vgs (Max) | ±30V | ±30V | ±30V | ±20V |
| Supplier Device Package | ITO-220 | TO-252, (D-Pak) | TO-251 (IPAK) | TO-252, (D-Pak) |
Eroflueden TSM4NB60CI PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir TSM4NB60CI - Taiwan Semiconductor Corporation.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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