1N4148 Tech Spezifikatioune
Taiwan Semiconductor Corporation - 1N4148 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - 1N4148
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 10 mA | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-35 | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Serie | - | |
| Reverse Recovery Time (trr) | 4 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AH, DO-35, Axial | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 75 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 150mA | |
| Capacitance @ Vr, F. | 4pF @ 0V, 1MHz | |
| Basis Produktnummer | 1N4148 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation 1N4148.
| Produktiounsattriff |  |
|
 |
 |
|---|---|---|---|---|
| Part Number | 1N4148 | 1N4148 | 1N413B | 1N413B |
| Hiersteller | Taiwan Semiconductor Corporation | Diotec Semiconductor | Microchip Technology | Solid State Inc. |
| Capacitance @ Vr, F. | 4pF @ 0V, 1MHz | 4pF @ 0V, 1MHz | - | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 10 mA | 1 V @ 10 mA | 1.2 V @ 200 A | 1.2 V @ 200 A |
| Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Supplier Device Package | DO-35 | DO-35 | DO-205AA (DO-8) | DO-8 |
| Package protegéieren | Tape & Reel (TR) | Box | Bulk | Box |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 75 V | 200 V | 200 V |
| Serie | - | - | - | - |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 75 V | 5 µA @ 75 V | 50 µA @ 200 V | 50 µA @ 200 V |
| Reverse Recovery Time (trr) | 4 ns | 4 ns | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 150mA | 200mA | 100A | 100A |
| Basis Produktnummer | 1N4148 | 1N414 | - | - |
| Package / Case | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-205AA, DO-8, Stud | DO-205AA, DO-8, Stud |
| Technologie | Standard | Standard | Standard | Standard |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | -50°C ~ 175°C | -65°C ~ 200°C | -65°C ~ 200°C |
| Mounting Type | Through Hole | Through Hole | Stud Mount | Stud Mount |
Eroflueden 1N4148 PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir 1N4148 - Taiwan Semiconductor Corporation.
1N4148Diotec SemiconductorDIODE GEN PURP 75V 200MA DO351N413BMicrochip TechnologyDIODE GEN PURP 200V 100A DO205AA1N4148 SMF30A FM4007YANGJIE1N4148 SOD-323,0805MIC
1N4138AMicrosemiIGBT Module1N413BSolid State Inc.DIODE GEN PURP 200V 100A DO8
1N4148Fairchild SemiconductorDIODE GEN PURP 100V 200MA DO35
1N4148 B/PSTMicroelectronics
1N4148Micro Commercial CoDIODE GEN PURP 75V 150MA DO35
1N4148SMC Diode SolutionsDIODE GEN PURP 75V 300MA DO35
1N4148onsemiDIODE GEN PURP 100V 200MA DO35
1N4147WDiodes Incorporated1N4148 LL34STMicroelectronics1N4148Good-Ark SemiconductorDIODE, SWITCHING, 150MA, 75V, DO1N413RMicrosemiIGBT Module1N4138RMicrochip TechnologyDIODE GEN PURP REV 600V 70A DO51N4148NTE Electronics, IncDIODE GEN PURP 75V 150MA DO35
1N4148 1N4148W-E3-08Electro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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