1N413B Tech Spezifikatioune
Microchip Technology - 1N413B technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - 1N413B
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 200 A | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-205AA (DO-8) | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-205AA, DO-8, Stud | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 50 µA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 100A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology 1N413B.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | 1N413B | 1N4148 | 1N4136 | 1N4148 |
| Hiersteller | Microchip Technology | SMC Diode Solutions | Microchip Technology | Diotec Semiconductor |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Small Signal =< 200mA (Io), Any Speed |
| Serie | - | - | - | - |
| Technologie | Standard | Standard | Standard | Standard |
| Package / Case | DO-205AA, DO-8, Stud | DO-204AH, DO-35, Axial | DO-203AB, DO-5, Stud | DO-204AH, DO-35, Axial |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | -65°C ~ 175°C | -65°C ~ 200°C | -50°C ~ 175°C |
| Supplier Device Package | DO-205AA (DO-8) | DO-35 | DO-5 (DO-203AB) | DO-35 |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 200 A | 1 V @ 10 mA | 1.25 V @ 200 A | 1 V @ 10 mA |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 75 V | 200 V | 75 V |
| Capacitance @ Vr, F. | - | 4pF @ 0V, 1MHz | - | 4pF @ 0V, 1MHz |
| Mounting Type | Stud Mount | Through Hole | Stud Mount | Through Hole |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 100A | 300mA | 70A | 200mA |
| Aktuell - Reverse Leakage @ Vr | 50 µA @ 200 V | 5 µA @ 75 V | 25 µA @ 200 V | 5 µA @ 75 V |
| Package protegéieren | Bulk | Cut Tape (CT) | Bulk | Box |
Eroflueden 1N413B PDF DataDhusts an Microchip Technology Dokumentatioun fir 1N413B - Microchip Technology.
1N4148SMC Diode SolutionsDIODE GEN PURP 75V 300MA DO351N4136Microchip TechnologyDIODE GEN PURP 200V 70A DO51N4148Diotec SemiconductorDIODE GEN PURP 75V 200MA DO35
1N413BSolid State Inc.DIODE GEN PURP 200V 100A DO81N4138Microchip TechnologyDIODE GEN PURP 600V 70A DO5
1N4148Fairchild SemiconductorDIODE GEN PURP 100V 200MA DO351N4137Microchip TechnologyDIODE GEN PURP 400V 70A DO5
1N4147WDiodes Incorporated1N412RMSCIGBT Module
1N4148onsemiDIODE GEN PURP 100V 200MA DO35
1N4148Taiwan Semiconductor CorporationDO-35, 100V, 0.15A, SWITCHING DI1N412BSolid State Inc.DIODE GEN PURP 100V 100A DO8
1N4137RMicrosemiIGBT Module
1N4148Micro Commercial CoDIODE GEN PURP 75V 150MA DO351N413RMicrosemiIGBT Module1N4138AMicrosemiIGBT Module1N4138RMicrochip TechnologyDIODE GEN PURP REV 600V 70A DO51N4136RMicrosemiIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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