1N2280 Tech Spezifikatioune
Solid State Inc. - 1N2280 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Solid State Inc. - 1N2280
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Solid State Inc. | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.19 V @ 90 A | |
| Voltage - DC Reverse (Vr) (Max) | 1000 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-5 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-203AB, DO-5, Stud | |
| Package protegéieren | Box | |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 1000 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 40A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Solid State Inc. 1N2280.
| Produktiounsattriff |  |
|
 |
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|---|---|---|---|---|
| Part Number | 1N2280 | 1N2278 | 1N2279 | 1N2280 |
| Hiersteller | Solid State Inc. | Solid State Inc. | Microchip Technology | Microchip Technology |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 1000 V | 10 µA @ 600 V | 10 µA @ 800 V | 10 µA @ 1000 V |
| Package / Case | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Capacitance @ Vr, F. | - | - | - | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1.19 V @ 90 A | 1.19 V @ 90 A | 1.19 V @ 90 A | 1.19 V @ 90 A |
| Package protegéieren | Box | Box | Bulk | Bulk |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 40A | 40A | 6A | 6A |
| Voltage - DC Reverse (Vr) (Max) | 1000 V | 600 V | 800 V | 1000 V |
| Supplier Device Package | DO-5 | DO-5 | DO-5 (DO-203AB) | DO-5 (DO-203AB) |
| Technologie | Standard | Standard | Standard | Standard |
| Mounting Type | Stud Mount | Stud Mount | Stud Mount | Stud Mount |
| Serie | - | - | - | - |
1N2278Solid State Inc.DIODE GEN PURP 600V 40A DO51N2279Microchip TechnologyDIODE GEN PURP 800V 6A DO51N2280Microchip TechnologyDIODE GEN PURP 1KV 6A DO51N2279Solid State Inc.DIODE GEN PURP 800V 40A DO51N2282Microchip TechnologyDIODE GEN PURP 300V 20A DO51N2282Solid State Inc.DIODE GEN PURP 300V 40A DO51N2278Microchip TechnologyDIODE GEN PURP 600V 6A DO51N2282RSolid State Inc.DIODE GEN PURP REV 300V 40A DO51N2276RSolid State Inc.DIODE GEN PURP REV 400V 40A DO51N2276Microchip TechnologyDIODE GEN PURP 400V 6A DO51N2280RSolid State Inc.DIODE GEN PURP REV 1KV 40A DO51N2282RMicrochip TechnologyDIODE GEN PURP 300V 35A DO51N2281Microchip TechnologyDIODE GEN PURP 1.2KV 6A DO51N2281Solid State Inc.DIODE GEN PURP 1.2KV 40A DO51N2276Solid State Inc.DIODE GEN PURP 400V 40A DO51N2279RSolid State Inc.DIODE GEN PURP REV 800V 40A DO51N2281RSolid State Inc.DIODE GEN PURP REV 1.2KV 40A DO51N2278RSolid State Inc.DIODE GEN PURP REV 600V 40A DO5| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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