1N2278 Tech Spezifikatioune
Microchip Technology - 1N2278 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - 1N2278
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.19 V @ 90 A | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-5 (DO-203AB) | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 5 µs |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-203AB, DO-5, Stud | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 6A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology 1N2278.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | 1N2278 | 1N2276R | 1N2279R | 1N2276 |
| Hiersteller | Microchip Technology | Solid State Inc. | Solid State Inc. | Microchip Technology |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 400 V | 800 V | 400 V |
| Mounting Type | Stud Mount | Stud Mount | Stud Mount | Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Supplier Device Package | DO-5 (DO-203AB) | DO-5 | DO-5 | DO-5 (DO-203AB) |
| Voltage - Viru (Vf) (Max) @ Wann | 1.19 V @ 90 A | 1.19 V @ 90 A | 1.19 V @ 90 A | 1.19 V @ 90 A |
| Reverse Recovery Time (trr) | 5 µs | - | - | 5 µs |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C |
| Serie | - | - | - | - |
| Package / Case | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | 10 µA @ 400 V | 10 µA @ 800 V | 10 µA @ 400 V |
| Package protegéieren | Bulk | Box | Box | Bulk |
| Capacitance @ Vr, F. | - | - | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 6A | 40A | 40A | 6A |
| Technologie | Standard | Standard, Reverse Polarity | Standard, Reverse Polarity | Standard |
Eroflueden 1N2278 PDF DataDhusts an Microchip Technology Dokumentatioun fir 1N2278 - Microchip Technology.
1N2276RSolid State Inc.DIODE GEN PURP REV 400V 40A DO51N2279RSolid State Inc.DIODE GEN PURP REV 800V 40A DO51N2276Microchip TechnologyDIODE GEN PURP 400V 6A DO51N2280Solid State Inc.DIODE GEN PURP 1KV 40A DO51N2274RSolid State Inc.DIODE GEN PURP REV 200V 40A DO51N2276Solid State Inc.DIODE GEN PURP 400V 40A DO51N2275Solid State Inc.DIODE GEN PURP 300V 40A DO51N2275RSolid State Inc.DIODE GEN PURP REV 300V 40A DO51N2280Microchip TechnologyDIODE GEN PURP 1KV 6A DO51N2281Microchip TechnologyDIODE GEN PURP 1.2KV 6A DO51N2279Microchip TechnologyDIODE GEN PURP 800V 6A DO51N2279Solid State Inc.DIODE GEN PURP 800V 40A DO51N2280RSolid State Inc.DIODE GEN PURP REV 1KV 40A DO51N2275Microchip TechnologyDIODE GEN PURP 300V 6A DO51N2281Solid State Inc.DIODE GEN PURP 1.2KV 40A DO51N2274Solid State Inc.DIODE GEN PURP 200V 40A DO51N2278Solid State Inc.DIODE GEN PURP 600V 40A DO51N2278RSolid State Inc.DIODE GEN PURP REV 600V 40A DO5| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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