1N2129R Tech Spezifikatioune
Solid State Inc. - 1N2129R technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Solid State Inc. - 1N2129R
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Solid State Inc. | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 200 A | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Standard, Reverse Polarity | |
| Supplier Device Package | DO-5 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-203AB, DO-5, Stud | |
| Package protegéieren | Box | |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 25 µA @ 100 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 70A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Solid State Inc. 1N2129R.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | 1N2129R | 1N2129A | 1N2129A | 1N2130A |
| Hiersteller | Solid State Inc. | GeneSiC Semiconductor | Microchip Technology | GeneSiC Semiconductor |
| Mounting Type | Stud Mount | Chassis, Stud Mount | Stud Mount | Chassis, Stud Mount |
| Supplier Device Package | DO-5 | DO-5 | DO-5 (DO-203AB) | DO-5 |
| Serie | - | - | - | - |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 70A | 60A | 70A | 60A |
| Aktuell - Reverse Leakage @ Vr | 25 µA @ 100 V | 10 µA @ 50 V | 25 µA @ 100 V | 10 µA @ 50 V |
| Technologie | Standard, Reverse Polarity | Standard | Standard | Standard |
| Package protegéieren | Box | Bulk | Bulk | Bulk |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V | 150 V |
| Package / Case | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud |
| Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 200 A | 1.1 V @ 60 A | 1.25 V @ 200 A | 1.1 V @ 60 A |
| Capacitance @ Vr, F. | - | - | - | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
1N2129AGeneSiC SemiconductorDIODE GEN PURP 100V 60A DO51N2129AMicrochip TechnologyDIODE GEN PURP 100V 70A DO51N2130AGeneSiC SemiconductorDIODE GEN PURP 150V 60A DO51N2130ASolid State Inc.DIODE GEN PURP 150V 70A DO51N2128RASolid State Inc.DIODE GEN PURP REV 50V 70A DO51N2129Microchip TechnologyDIODE GEN PURP 100V 70A DO51N2130AMicrochip TechnologyDIODE GEN PURP 150V 70A DO51N2129ASolid State Inc.DIODE GEN PURP 100V 70A DO51N2129RAMicrochip TechnologyDIODE GEN PURP REV 100V 70A DO51N2129ARGeneSiC SemiconductorDIODE GEN PURP REV 100V 60A DO51N2129ARMicrochip TechnologyDIODE GEN PURP REV 100V 70A DO51N2129RMicrochip TechnologyDIODE GEN PURP REV 100V 70A DO51N2130Solid State Inc.DIODE GEN PURP 150V 70A DO51N2129Solid State Inc.DIODE GEN PURP 100V 70A DO51N2130RSolid State Inc.DIODE GEN PURP REV 150V 70A DO51N2129RASolid State Inc.DIODE GEN PURP REV 100V 70A DO51N2128RAMicrochip TechnologyDIODE GEN PURP REV 50V 70A DO51N2130Microchip TechnologyDIODE GEN PURP 150V 70A DO5| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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