1N2129A Tech Spezifikatioune
Solid State Inc. - 1N2129A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Solid State Inc. - 1N2129A
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Solid State Inc. | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 200 A | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-5 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-203AB, DO-5, Stud | |
| Package protegéieren | Box | |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 25 µA @ 100 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 70A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Solid State Inc. 1N2129A.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N2129A | 1N2129 | 1N2130 | 1N2129R |
| Hiersteller | Solid State Inc. | Solid State Inc. | Microchip Technology | Solid State Inc. |
| Technologie | Standard | Standard | Standard | Standard, Reverse Polarity |
| Capacitance @ Vr, F. | - | - | - | - |
| Mounting Type | Stud Mount | Stud Mount | Stud Mount | Stud Mount |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C |
| Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 200 A | 1.25 V @ 200 A | 1.25 V @ 200 A | 1.25 V @ 200 A |
| Package protegéieren | Box | Box | Bulk | Box |
| Package / Case | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud |
| Supplier Device Package | DO-5 | DO-5 | DO-5 (DO-203AB) | DO-5 |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 150 V | 100 V |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Aktuell - Reverse Leakage @ Vr | 25 µA @ 100 V | 25 µA @ 100 V | 25 µA @ 150 V | 25 µA @ 100 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 70A | 70A | 70A | 70A |
| Serie | - | - | - | - |
1N2129Solid State Inc.DIODE GEN PURP 100V 70A DO51N2130Microchip TechnologyDIODE GEN PURP 150V 70A DO51N2129RSolid State Inc.DIODE GEN PURP REV 100V 70A DO51N2128ARMicrochip TechnologyDIODE GEN PURP REV 50V 70A DO51N2129AMicrochip TechnologyDIODE GEN PURP 100V 70A DO51N2128RMicrochip TechnologyDIODE GEN PURP REV 50V 70A DO51N2128RSolid State Inc.DIODE GEN PURP REV 50V 70A DO51N2128RASolid State Inc.DIODE GEN PURP REV 50V 70A DO5
1N2129AGeneSiC SemiconductorDIODE GEN PURP 100V 60A DO51N2129RMicrochip TechnologyDIODE GEN PURP REV 100V 70A DO51N2129ARMicrochip TechnologyDIODE GEN PURP REV 100V 70A DO51N2129ARGeneSiC SemiconductorDIODE GEN PURP REV 100V 60A DO51N2129RASolid State Inc.DIODE GEN PURP REV 100V 70A DO51N2129Microchip TechnologyDIODE GEN PURP 100V 70A DO51N2128ARGeneSiC SemiconductorDIODE GEN PURP REV 50V 60A DO51N2128RAMicrochip TechnologyDIODE GEN PURP REV 50V 70A DO51N2128AGeneSiC SemiconductorDIODE GEN PURP 50V 60A DO51N2129RAMicrochip TechnologyDIODE GEN PURP REV 100V 70A DO5| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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