STF9N65M2 Tech Spezifikatioune
STMicroelectronics - STF9N65M2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STF9N65M2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220FP | |
Serie | MDmesh™ | |
Rds On (Max) @ Id, Vgs | 900mOhm @ 2.5A, 10V | |
Power Dissipation (Max) | 20W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | |
Basis Produktnummer | STF9 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STF9N65M2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STF9N65M2 | STF8NM60ND | STF9NM60N | STF9NM50N |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 100 V | 560 pF @ 50 V | 452 pF @ 50 V | 570 pF @ 50 V |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
Supplier Device Package | TO-220FP | TO-220FP | TO-220FP | TO-220FP |
Vgs (Max) | ±25V | ±30V | ±25V | ±25V |
Serie | MDmesh™ | FDmesh™ II | MDmesh™ II | MDmesh™ |
Basis Produktnummer | STF9 | STF8 | STF9NM60 | STF9 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | 7A (Tc) | 6.5A (Tc) | 5A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V | 22 nC @ 10 V | 17.4 nC @ 10 V | 20 nC @ 10 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 20W (Tc) | 25W (Tc) | 25W (Tc) | 25W (Tc) |
Entworf fir Source Voltage (Vdss) | 650 V | 600 V | 600 V | 500 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package protegéieren | Tube | Tube | Tube | Tube |
Rds On (Max) @ Id, Vgs | 900mOhm @ 2.5A, 10V | 700mOhm @ 3.5A, 10V | 745mOhm @ 3.25A, 10V | 560mOhm @ 3.7A, 10V |
Eroflueden STF9N65M2 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STF9N65M2 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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