STF8NM60ND Tech Spezifikatioune
STMicroelectronics - STF8NM60ND technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STF8NM60ND
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220FP | |
Serie | FDmesh™ II | |
Rds On (Max) @ Id, Vgs | 700mOhm @ 3.5A, 10V | |
Power Dissipation (Max) | 25W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Tc) | |
Basis Produktnummer | STF8 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STF8NM60ND.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STF8NM60ND | STF8N80K5 | STF9N60M2 | STF9N65M2 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Basis Produktnummer | STF8 | STF8 | STF9N60 | STF9 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Tc) | 6A (Tc) | 5.5A (Tc) | 5A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | 16.5 nC @ 10 V | 10 nC @ 10 V | 10 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 700mOhm @ 3.5A, 10V | 950mOhm @ 3A, 10V | 780mOhm @ 3A, 10V | 900mOhm @ 2.5A, 10V |
Vgs (Max) | ±30V | ±30V | ±25V | ±25V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Serie | FDmesh™ II | SuperMESH5™ | MDmesh™ II Plus | MDmesh™ |
Supplier Device Package | TO-220FP | TO-220FP | TO-220FP | TO-220FP |
Entworf fir Source Voltage (Vdss) | 600 V | 800 V | 600 V | 650 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 100µA | 4V @ 250µA | 4V @ 250µA |
Power Dissipation (Max) | 25W (Tc) | 25W (Tc) | 20W (Tc) | 20W (Tc) |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 50 V | 450 pF @ 100 V | 320 pF @ 100 V | 315 pF @ 100 V |
Package protegéieren | Tube | Tube | Tube | Tube |
FET Feature | - | - | - | - |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Eroflueden STF8NM60ND PDF DataDhusts an STMicroelectronics Dokumentatioun fir STF8NM60ND - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.