STF60N55F3 Tech Spezifikatioune
STMicroelectronics - STF60N55F3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STF60N55F3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220FP | |
Serie | STripFET™ III | |
Rds On (Max) @ Id, Vgs | 8.5mOhm @ 32A, 10V | |
Power Dissipation (Max) | 30W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 42A (Tc) | |
Basis Produktnummer | STF60N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STF60N55F3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STF60N55F3 | STF5NK100Z | STF6N62K3 | STF5N62K3 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Power Dissipation (Max) | 30W (Tc) | 30W (Tc) | 30W (Tc) | 25W (Tc) |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | 59 nC @ 10 V | 34 nC @ 10 V | 26 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 42A (Tc) | 3.5A (Tc) | 5.5A (Tc) | 4.2A (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package protegéieren | Tube | Tube | Tube | Tube |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | STF60N | STF5NK100 | STF6 | STF5N62 |
Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V | 1154 pF @ 25 V | 875 pF @ 50 V | 680 pF @ 50 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4.5V @ 100µA | 4.5V @ 50µA | 4.5V @ 50µA |
Serie | STripFET™ III | SuperMESH3™ | SuperMESH3™ | SuperMESH3™ |
Rds On (Max) @ Id, Vgs | 8.5mOhm @ 32A, 10V | 3.7Ohm @ 1.75A, 10V | 1.28Ohm @ 2.8A, 10V | 1.6Ohm @ 2.1A, 10V |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 55 V | 1000 V | 620 V | 620 V |
Supplier Device Package | TO-220FP | TO-220FP | TO-220FP | TO-220FP |
Vgs (Max) | ±20V | ±30V | ±30V | ±30V |
Eroflueden STF60N55F3 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STF60N55F3 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.