STF6N60DM2 Tech Spezifikatioune
STMicroelectronics - STF6N60DM2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STF6N60DM2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.75V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220FP | |
Serie | MDmesh™ DM2 | |
Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.5A, 10V | |
Power Dissipation (Max) | 20W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 274 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | |
Basis Produktnummer | STF6 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STF6N60DM2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STF6N60DM2 | STF60N55F3 | STF6N65M2 | STF6N52K3 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | 42A (Tc) | 4A (Tc) | 5A (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Supplier Device Package | TO-220FP | TO-220FP | TO-220FP | TO-220FP |
Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 10 V | 45 nC @ 10 V | 9.8 nC @ 10 V | 26 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.5A, 10V | 8.5mOhm @ 32A, 10V | 1.35Ohm @ 2A, 10V | 1.2Ohm @ 2.5A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 274 pF @ 100 V | 2200 pF @ 25 V | 226 pF @ 100 V | 670 pF @ 50 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Serie | MDmesh™ DM2 | STripFET™ III | MDmesh™ | SuperMESH3™ |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (Max) | ±25V | ±20V | ±25V | ±30V |
Power Dissipation (Max) | 20W (Tc) | 30W (Tc) | 20W (Tc) | 25W (Tc) |
Package protegéieren | Tube | Tube | Tube | Tube |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Basis Produktnummer | STF6 | STF60N | STF6 | STF6N |
Entworf fir Source Voltage (Vdss) | 600 V | 55 V | 650 V | 525 V |
Vgs (th) (Max) @ Id | 4.75V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4.5V @ 50µA |
Eroflueden STF6N60DM2 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STF6N60DM2 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.