STF12N65M2 Tech Spezifikatioune
STMicroelectronics - STF12N65M2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STF12N65M2
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220FP | |
Serie | MDmesh™ M2 | |
Rds On (Max) @ Id, Vgs | 500mOhm @ 4A, 10V | |
Power Dissipation (Max) | 25W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | |
Basis Produktnummer | STF12 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STF12N65M2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STF12N65M2 | STF12NK60Z | STF12N120K5 | STF12N65M5 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 650 V | 600 V | 1200 V | 650 V |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-5 Full Pack |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | 10A (Tc) | 12A (Tc) | 8.5A (Tc) |
Rds On (Max) @ Id, Vgs | 500mOhm @ 4A, 10V | 640mOhm @ 5A, 10V | 690mOhm @ 6A, 10V | 430mOhm @ 4.3A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Package protegéieren | Tube | Tube | Tube | Tube |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Supplier Device Package | TO-220FP | TO-220FP | TO-220FP | TO-220FP |
Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 100 V | 1740 pF @ 25 V | 1370 pF @ 100 V | 900 pF @ 100 V |
Serie | MDmesh™ M2 | SuperMESH™ | MDmesh™ K5 | MDmesh™ V |
Power Dissipation (Max) | 25W (Tc) | 35W (Tc) | 40W (Tc) | 25W (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V | 59 nC @ 10 V | 44.2 nC @ 10 V | 22 nC @ 10 V |
FET Feature | - | - | - | - |
Vgs (Max) | ±25V | ±30V | ±30V | ±25V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4.5V @ 100µA | 5V @ 100µA | 5V @ 250µA |
Basis Produktnummer | STF12 | STF12 | STF12 | STF12 |
Eroflueden STF12N65M2 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STF12N65M2 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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