STF11NM80 Tech Spezifikatioune
STMicroelectronics - STF11NM80 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STF11NM80
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220FP | |
| Serie | MDmesh™ | |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.5A, 10V | |
| Power Dissipation (Max) | 35W (Tc) | |
| Package / Case | TO-220-3 Full Pack | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 43.6 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 800 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | |
| Basis Produktnummer | STF11 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STF11NM80.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | STF11NM80 | STF12N65M2 | STF12N60M2 | STF11NM60N |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Power Dissipation (Max) | 35W (Tc) | 25W (Tc) | 25W (Tc) | 25W (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| FET Feature | - | - | - | - |
| Vgs (Max) | ±30V | ±25V | ±25V | ±25V |
| Basis Produktnummer | STF11 | STF12 | STF12 | STF11 |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| Serie | MDmesh™ | MDmesh™ M2 | MDmesh™ M2 | MDmesh™ II |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 800 V | 650 V | 600 V | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 25 V | 535 pF @ 100 V | 538 pF @ 100 V | 850 pF @ 50 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Gate Charge (Qg) (Max) @ Vgs | 43.6 nC @ 10 V | 16.5 nC @ 10 V | 16 nC @ 10 V | 31 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.5A, 10V | 500mOhm @ 4A, 10V | 450mOhm @ 4.5A, 10V | 450mOhm @ 5A, 10V |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Supplier Device Package | TO-220FP | TO-220FP | TO-220FP | TO-220FP |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | 8A (Tc) | 9A (Tc) | 10A (Tc) |
| Package protegéieren | Tube | Tube | Tube | Tube |
Eroflueden STF11NM80 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STF11NM80 - STMicroelectronics.
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STF12A60SEMIWELLSTF11NM50N MOSSTMicroelectronicsSTF11NM60NDSTMicroelectronicsMOSFET N-CH 600V 10A TO220FPSTF12A80SEMIWELL| Allgemeng Länner Login logistesch Zäit Referenz | ||
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| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
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| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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