STD10NF10T4 Tech Spezifikatioune
STMicroelectronics - STD10NF10T4 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STD10NF10T4
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DPAK | |
Serie | STripFET™ II | |
Rds On (Max) @ Id, Vgs | 130mOhm @ 5A, 10V | |
Power Dissipation (Max) | 50W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Tc) | |
Basis Produktnummer | STD10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STD10NF10T4.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STD10NF10T4 | STD10NM50N | STD10N60M6 | STD10NM65N |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Basis Produktnummer | STD10 | STD10 | STD10 | STD10 |
Serie | STripFET™ II | MDmesh™ II | MDmesh™ M6 | MDmesh™ II |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V | 450 pF @ 50 V | 338 pF @ 100 V | 850 pF @ 50 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Power Dissipation (Max) | 50W (Tc) | 70W (Tc) | 60W (Tc) | 90W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Tc) | 7A (Tc) | 6.4A (Tc) | 9A (Tc) |
Vgs (Max) | ±20V | ±25V | ±25V | ±25V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4.75V @ 250µA | 4V @ 250µA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 130mOhm @ 5A, 10V | 630mOhm @ 3.5A, 10V | 600mOhm @ 3.2A, 10V | 480mOhm @ 4.5A, 10V |
Supplier Device Package | DPAK | DPAK | D-PAK (TO-252) | DPAK |
Entworf fir Source Voltage (Vdss) | 100 V | 500 V | 600 V | 650 V |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | 17 nC @ 10 V | 8.8 nC @ 10 V | 25 nC @ 10 V |
Eroflueden STD10NF10T4 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STD10NF10T4 - STMicroelectronics.
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
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1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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