STD10N60M2 Tech Spezifikatioune
STMicroelectronics - STD10N60M2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STD10N60M2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DPAK | |
Serie | MDmesh™ II Plus | |
Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V | |
Power Dissipation (Max) | 85W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.5A (Tc) | |
Basis Produktnummer | STD10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STD10N60M2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STD10N60M2 | STD1063T4 | STD10N60DM2 | STD10LN80K5 |
Hiersteller | STMicroelectronics | onsemi | STMicroelectronics | STMicroelectronics |
Power Dissipation (Max) | 85W (Tc) | - | 109W (Tc) | 110W (Tc) |
Vgs (th) (Max) @ Id | 4V @ 250µA | - | 5V @ 250µA | 5V @ 100µA |
Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 600 V | - | 650 V | 800 V |
FET Feature | - | - | - | - |
Basis Produktnummer | STD10 | - | STD10 | STD10 |
Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 100 V | - | 529 pF @ 100 V | 427 pF @ 100 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.5A (Tc) | - | 8A (Tc) | 8A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | 10V |
Serie | MDmesh™ II Plus | * | MDmesh™ DM2 | MDmesh™ K5 |
FET Typ | N-Channel | - | N-Channel | N-Channel |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (Max) | ±25V | - | ±25V | ±30V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | DPAK | - | DPAK | D-PAK (TO-252) |
Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V | - | 530mOhm @ 4A, 10V | 630mOhm @ 4A, 10V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type | Surface Mount | - | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 10 V | - | 15 nC @ 10 V | 15 nC @ 10 V |
Eroflueden STD10N60M2 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STD10N60M2 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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