2SJ649-AZ Tech Spezifikatioune
Renesas Electronics America Inc - 2SJ649-AZ technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Renesas Electronics America Inc - 2SJ649-AZ
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Renesas Electronics Corporation | |
| Vgs (th) (Max) @ Id | - | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220 Isolated Tab | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 10A, 10V | |
| Power Dissipation (Max) | 2W (Ta), 25W (Tc) | |
| Package / Case | TO-220-3 Isolated Tab | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | |
| Basis Produktnummer | 2SJ649 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Renesas Electronics America Inc 2SJ649-AZ.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | 2SJ649-AZ | 2SJ652-1E | 2SJ648-T1-A | 2SJ651 |
| Hiersteller | Renesas Electronics America Inc | onsemi | Renesas Electronics America Inc | onsemi |
| Vgs (Max) | ±20V | ±20V | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | - | - | - | - |
| Power Dissipation (Max) | 2W (Ta), 25W (Tc) | 2W (Ta), 30W (Tc) | - | 2W (Ta), 25W (Tc) |
| Mounting Type | Through Hole | Through Hole | - | Through Hole |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V | 80 nC @ 10 V | - | 45 nC @ 10 V |
| Serie | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 10A, 10V | 38mOhm @ 14A, 10V | - | 60mOhm @ 10A, 10V |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | - | 150°C (TJ) |
| Package / Case | TO-220-3 Isolated Tab | TO-220-3 Full Pack | - | TO-220-3 Full Pack |
| Supplier Device Package | TO-220 Isolated Tab | TO-220F-3SG | - | TO-220ML |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 4V, 10V | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 10 V | 4360 pF @ 20 V | - | 2200 pF @ 20 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | 28A (Ta) | 400mA (Tj) | 20A (Ta) |
| Basis Produktnummer | 2SJ649 | 2SJ652 | - | - |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | - | 60 V |
| FET Typ | P-Channel | P-Channel | - | P-Channel |
| Package protegéieren | Bulk | Tube | Tape & Reel (TR) | Bulk |
Eroflueden 2SJ649-AZ PDF DataDhusts an Renesas Electronics America Inc Dokumentatioun fir 2SJ649-AZ - Renesas Electronics America Inc.
2SJ649-S17Fairchild (onsemi)2SJ652-1EonsemiMOSFET P-CH 60V 28A TO220F-3SG2SJ648-T1-A/JMNEC2SJ648-T1-ARenesas Electronics America IncTRANSISTOR2SJ651onsemiMOSFET P-CH 60V 20A TO220ML2SJ647-T1-ARenesas Electronics Corporation2SJ648-T1-ATNEC2SJ648-T1-AT/JMNEC2SJ653onsemiPOWER MOSFET MOTOR DRIVERS2SJ647-T1NEC2SJ653-TH MOSAMI Semiconductor/onsemi2SJ653/J653SAY2SJ650onsemiMOSFET P-CH 60V 12A TO220ML2SJ648-T1NEC2SJ652-THAMI Semiconductor/onsemi2SJ649Renesas Electronics Corporation2SJ652SanyoPOWER MOSFET MOTOR DRIVERS2SJ647M-T1-ARenesas Electronics Corporation| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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