2SJ652-1E Tech Spezifikatioune
onsemi - 2SJ652-1E technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - 2SJ652-1E
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | - | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220F-3SG | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 14A, 10V | |
| Power Dissipation (Max) | 2W (Ta), 30W (Tc) | |
| Package / Case | TO-220-3 Full Pack | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 4360 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 28A (Ta) | |
| Basis Produktnummer | 2SJ652 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi 2SJ652-1E.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | 2SJ652-1E | 2SJ652 | 2SJ654 | 2SJ656 |
| Hiersteller | onsemi | Sanyo | onsemi | onsemi |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 14A, 10V | 38mOhm @ 14A, 10V | - | 75.5mOhm @ 9A, 10V |
| Serie | - | - | * | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4360 pF @ 20 V | 4360 pF @ 20 V | - | 4200 pF @ 20 V |
| Power Dissipation (Max) | 2W (Ta), 30W (Tc) | 2W (Ta), 30W (Tc) | - | 2W (Ta), 30W (Tc) |
| Vgs (th) (Max) @ Id | - | - | - | - |
| FET Feature | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | 80 nC @ 10 V | - | 74 nC @ 10 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 28A (Ta) | 28A (Ta) | - | 18A (Ta) |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 4V, 10V | - | 4V, 10V |
| FET Typ | P-Channel | P-Channel | - | P-Channel |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | - | 150°C (TJ) |
| Vgs (Max) | ±20V | ±20V | - | ±20V |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | - | 100 V |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | - | TO-220-3 Full Pack |
| Package protegéieren | Tube | Bulk | Bulk | Bulk |
| Mounting Type | Through Hole | Through Hole | - | Through Hole |
| Supplier Device Package | TO-220F-3SG | TO-220ML | - | TO-220ML |
| Basis Produktnummer | 2SJ652 | 2SJ652 | - | 2SJ656 |
Eroflueden 2SJ652-1E PDF DataDhusts an onsemi Dokumentatioun fir 2SJ652-1E - onsemi.
2SJ652SanyoPOWER MOSFET MOTOR DRIVERS2SJ654onsemiP-CHANNL SILICON MOSFET2SJ656onsemiMOSFET P-CH 100V 18A TO220ML
2SJ649Renesas Electronics Corporation2SJ653-TH MOSAMI Semiconductor/onsemi2SJ651onsemiMOSFET P-CH 60V 20A TO220ML2SJ653/J653SAY2SJ655/J655SAY2SJ648-T1-A/JMNEC2SJ650onsemiMOSFET P-CH 60V 12A TO220ML2SJ648-T1-AT/JMNEC2SJ655 J655AMI Semiconductor/onsemi2SJ649-AZRenesas Electronics America IncMOSFET P-CH 60V 20A TO2202SJ652-THAMI Semiconductor/onsemi2SJ648-T1-ATNEC2SJ655onsemiMOSFET P-CH 100V 12A TO220ML2SJ653onsemiPOWER MOSFET MOTOR DRIVERS
2SJ649-S17Fairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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