RF1S9640 Tech Spezifikatioune
Harris Corporation - RF1S9640 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Harris Corporation - RF1S9640
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Harris Corporation | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6A, 10V | |
| Power Dissipation (Max) | 125W (Tc) | |
| Package / Case | TO-220-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Harris Corporation RF1S9640.
| Produktiounsattriff | |
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|
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|---|---|---|---|---|
| Part Number | RF1S9640 | RF1S9640SM9A | RF1S9630 | RF1S9640SM9A |
| Hiersteller | Harris Corporation | Harris Corporation | Harris Corporation | Fairchild Semiconductor |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Package / Case | TO-220-3 | - | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Entworf fir Source Voltage (Vdss) | 200 V | - | - | 200 V |
| Power Dissipation (Max) | 125W (Tc) | - | - | 125W (Tc) |
| Mounting Type | Through Hole | - | - | Surface Mount |
| FET Feature | - | - | - | - |
| FET Typ | P-Channel | - | - | P-Channel |
| Vgs (th) (Max) @ Id | 4V @ 250µA | - | - | 4V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | - | -55°C ~ 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | - | - | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V | - | - | ±20V |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6A, 10V | - | - | 500mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | - | - | 90 nC @ 10 V |
| Supplier Device Package | TO-220AB | - | - | TO-263AB |
| Serie | - | * | * | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V | - | - | 1100 pF @ 25 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | - | - | 11A (Tc) |
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RF1S9630SM9A MOSIntersil (Renesas Electronics Corporation)RF1S9630Harris CorporationP-CHANNEL POWER MOSFETRF1S9530SMVBSEMIRF1S9630SM9AFairchild (onsemi)RF1S9640SM9AFairchild SemiconductorP-CHANNEL POWER MOSFETRF1S9640SM MOSIntersil (Renesas Electronics Corporation)RF1S9640H022RF1S9640SMFairchild (onsemi)RF1S70N06SM9A MOSFairchild (onsemi)RF1S9540Harris CorporationP-CHANNEL POWER MOSFETSRF1S9630SMHarris CorporationP-CHANNEL POWER MOSFETRF1S70N06SM9AFairchild SemiconductorN-CHANNEL POWER MOSFETRF1S70N03Harris CorporationMOSFET N-CH 30V 70A TO262AA| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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