RF1S9630SM Tech Spezifikatioune
Harris Corporation - RF1S9630SM technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Harris Corporation - RF1S9630SM
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Harris Corporation | |
| Vgs (th) (Max) @ Id | - | |
| Vgs (Max) | - | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-263AB | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Power Dissipation (Max) | - | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | - | |
| Mounting Type | Surface Mount | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | - | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Harris Corporation RF1S9630SM.
| Produktiounsattriff | |
|
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|
|---|---|---|---|---|
| Part Number | RF1S9630SM | RF1S9630 | RF1S9640SM9A | RF1S70N06SM9A |
| Hiersteller | Harris Corporation | Harris Corporation | Fairchild Semiconductor | Fairchild Semiconductor |
| Rds On (Max) @ Id, Vgs | - | - | 500mOhm @ 6A, 10V | 14mOhm @ 70A, 10V |
| Power Dissipation (Max) | - | - | 125W (Tc) | 150W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| FET Feature | - | - | - | - |
| Serie | - | * | - | PSPICE® |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A | - | 11A (Tc) | 70A (Tc) |
| Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | - | - | ±20V | ±20V |
| Entworf fir Source Voltage (Vdss) | 200 V | - | 200 V | 60 V |
| FET Typ | P-Channel | - | P-Channel | N-Channel |
| Mounting Type | Surface Mount | - | Surface Mount | Surface Mount |
| Operatioun Temperatur | - | - | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Vgs (th) (Max) @ Id | - | - | 4V @ 250µA | 4V @ 250µA |
| Supplier Device Package | TO-263AB | - | TO-263AB | TO-263AB |
| Fuert Volt (Max Rds On, Min Rds On) | - | - | 10V | 10V |
RF1S9530SMVBSEMIRF1S9630Harris CorporationP-CHANNEL POWER MOSFETRF1S9640SM9AFairchild SemiconductorP-CHANNEL POWER MOSFETRF1S70N06SM9AFairchild SemiconductorN-CHANNEL POWER MOSFETRF1S640SM9A MOSFairchild (onsemi)
RF1S9640SM MOSIntersil (Renesas Electronics Corporation)RF1S9640SMFairchild (onsemi)RF1S840SHARRF1S70N03SM9A MOSHARRISRF1S9640Harris CorporationMOSFET P-CH 200V 11A TO220ABRF1S70N06SM9A MOSFairchild (onsemi)RF1S9630SM9A MOSIntersil (Renesas Electronics Corporation)RF1S70N03Harris CorporationMOSFET N-CH 30V 70A TO262AARF1S70N03 MOSFairchild (onsemi)RF1S9540Harris CorporationP-CHANNEL POWER MOSFETSRF1S9640H022RF1S9640SM9AHarris Corporation11A, 200V, 0.5OHM, P-CHANNEL POWRF1S9630SM9AFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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