1N4150 Tech Spezifikatioune
NTE Electronics, Inc - 1N4150 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NTE Electronics, Inc - 1N4150
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | NTE Electronics, Inc. | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 200 mA | |
| Voltage - DC Reverse (Vr) (Max) | 50 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-35 | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Serie | - | |
| Reverse Recovery Time (trr) | 6 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AH, DO-35, Axial | |
| Package protegéieren | Bag | |
| Operatiounstemperatur - Junction | 175°C (Max) | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 100 nA @ 50 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | |
| Capacitance @ Vr, F. | 2.5pF @ 0V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NTE Electronics, Inc 1N4150.
| Produktiounsattriff | |
 |
|
 |
|---|---|---|---|---|
| Part Number | 1N4150 | 1N4150 | 1N4150-1 | 1N4150TR |
| Hiersteller | NTE Electronics, Inc | Microchip Technology | Microchip Technology | onsemi |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Serie | - | - | - | - |
| Reverse Recovery Time (trr) | 6 ns | 4 ns | 4 ns | 6 ns |
| Voltage - DC Reverse (Vr) (Max) | 50 V | 50 V | 50 V | 50 V |
| Supplier Device Package | DO-35 | DO-35 (DO-204AH) | DO-35 | DO-35 |
| Aktuell - Reverse Leakage @ Vr | 100 nA @ 50 V | 100 nA @ 50 V | 100 nA @ 50 V | 100 nA @ 50 V |
| Capacitance @ Vr, F. | 2.5pF @ 0V, 1MHz | 2.5pF @ 0V, 1MHz | - | 2.5pF @ 0V, 1MHz |
| Package / Case | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial |
| Operatiounstemperatur - Junction | 175°C (Max) | -65°C ~ 175°C | -65°C ~ 175°C | 175°C (Max) |
| Technologie | Standard | Standard | Standard | Standard |
| Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | 200mA | 200mA | 200mA |
| Package protegéieren | Bag | Bulk | Bulk | Tape & Reel (TR) |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 200 mA | 1 V @ 200 mA | 1 V @ 200 mA | 1 V @ 200 mA |
Eroflueden 1N4150 PDF DataDhusts an NTE Electronics, Inc Dokumentatioun fir 1N4150 - NTE Electronics, Inc.
1N4150Microchip TechnologyDIODE GEN PURP 50V 200MA DO35
1N4149TAFairchild (onsemi)1N4150-1Microchip TechnologyDIODE GEN PURP 50V 200MA DO351N4150TRonsemiDIODE GEN PURP 50V 200MA DO351N4150onsemiDIODE GEN PURP 50V 200MA DO351N4151Fairchild SemiconductorDIODE GEN PURP 75V 150MA DO351N4148W_SOD123YJ1N4151onsemiDIODE GEN PURP 75V 150MA DO35
1N414W-7-06-FDiodes Incorporated1N4148W_R1_00101-PECPANJIT
1N414WSSTMicroelectronics
1N4150UR-1Microchip TechnologyDIODE GEN PURP 50V 200MA DO213AA1N4150Diotec SemiconductorDIODE GEN PURP 50V 300MA DO35
1N4150W-E3-08Vishay
1N4150TRVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 50V 300MA DO35
1N4148X-TPMicro Commercial CoDIODE GEN PURP 75V 150MA SOD5231N4150WMSV1N4150TRFairchild SemiconductorDIODE GEN PURP 50V 200MA DO35| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.