1N4150TR Tech Spezifikatioune
Fairchild Semiconductor - 1N4150TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - 1N4150TR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 200 mA | |
| Voltage - DC Reverse (Vr) (Max) | 50 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-35 (DO-204AH) | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Serie | - | |
| Reverse Recovery Time (trr) | 6 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AH, DO-35, Axial | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | 175°C (Max) | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 100 nA @ 50 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | |
| Capacitance @ Vr, F. | 2.5pF @ 0V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor 1N4150TR.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N4150TR | 1N4151 | 1N4150UR-1 | 1N4150TR |
| Hiersteller | Fairchild Semiconductor | Diotec Semiconductor | Microchip Technology | Vishay General Semiconductor - Diodes Division |
| Supplier Device Package | DO-35 (DO-204AH) | DO-35 | DO-213AA | DO-35 (DO-204AH) |
| Capacitance @ Vr, F. | 2.5pF @ 0V, 1MHz | 4pF @ 0V, 1MHz | - | 2.5pF @ 0V, 1MHz |
| Reverse Recovery Time (trr) | 6 ns | 4 ns | 4 ns | 4 ns |
| Package / Case | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-213AA (Glass) | DO-204AH, DO-35, Axial |
| Package protegéieren | Bulk | Box | Bulk | Tape & Reel (TR) |
| Operatiounstemperatur - Junction | 175°C (Max) | -50°C ~ 175°C | -65°C ~ 175°C | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 50 V | 50 V | 50 V | 50 V |
| Serie | - | - | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | 200mA | 200mA | 300mA |
| Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Aktuell - Reverse Leakage @ Vr | 100 nA @ 50 V | 50 nA @ 50 V | 100 nA @ 50 V | 100 nA @ 50 V |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Through Hole |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 200 mA | 1 V @ 50 mA | 1 V @ 200 mA | 1 V @ 200 mA |
| Technologie | Standard | Standard | Standard | Standard |
1N4151Diotec SemiconductorDIODE GEN PURP 50V 200MA DO35
1N414W-7-06-FDiodes Incorporated1N4150UR-1Microchip TechnologyDIODE GEN PURP 50V 200MA DO213AA
1N4149TAFairchild (onsemi)1N4150TRVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 50V 300MA DO351N4150WMSV1N4150NTE Electronics, IncDIODE GEN PURP 50V 200MA DO35
1N4151onsemiDIODE GEN PURP 75V 150MA DO35
1N4150Microchip TechnologyDIODE GEN PURP 50V 200MA DO351N4150TRonsemiDIODE GEN PURP 50V 200MA DO351N4151Microchip TechnologyDIODE GEN PURP 75V 200MA DO351N4150Diotec SemiconductorDIODE GEN PURP 50V 300MA DO351N4151Fairchild SemiconductorDIODE GEN PURP 75V 150MA DO35
1N4150W-E3-08Vishay
1N414WSSTMicroelectronics1N4150-1Microchip TechnologyDIODE GEN PURP 50V 200MA DO351N4150onsemiDIODE GEN PURP 50V 200MA DO351N4151NTE Electronics, IncDIODE GEN PURP 75V 150MA DO35| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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