APT14M100B Tech Spezifikatioune
Microchip Technology - APT14M100B technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - APT14M100B
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Microchip Technology | |
Vgs (th) (Max) @ Id | 5V @ 1mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247 [B] | |
Serie | POWER MOS 8™ | |
Rds On (Max) @ Id, Vgs | 900mOhm @ 7A, 10V | |
Power Dissipation (Max) | 500W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3965 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 1000 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Tc) | |
Basis Produktnummer | APT14M100 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology APT14M100B.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | APT14M100B | APT14050JVFR | APT13F120B | APT14M120B |
Hiersteller | Microchip Technology | Microsemi Corporation | Microchip Technology | Microchip Technology |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3965 pF @ 25 V | 13500 pF @ 25 V | 4765 pF @ 25 V | 4765 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Tc) | 23A (Tc) | 14A (Tc) | 14A (Tc) |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Mounting Type | Through Hole | Chassis Mount | Through Hole | Through Hole |
Rds On (Max) @ Id, Vgs | 900mOhm @ 7A, 10V | 500mOhm @ 11.5A, 10V | 1.4Ohm @ 7A, 10V | 1.2Ohm @ 7A, 10V |
Package protegéieren | Tube | Tube | Tube | Tube |
FET Feature | - | - | - | - |
Package / Case | TO-247-3 | SOT-227-4, miniBLOC | TO-247-3 | TO-247-3 |
Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | 820 nC @ 10 V | 145 nC @ 10 V | 145 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | APT14M100 | - | APT13F120 | APT14M120 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | TO-247 [B] | ISOTOP® | TO-247 [B] | TO-247 [B] |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 1000 V | 1400 V | 1200 V | 1200 V |
Serie | POWER MOS 8™ | POWER MOS V® | - | - |
Vgs (th) (Max) @ Id | 5V @ 1mA | 4V @ 5mA | 5V @ 1mA | 5V @ 1mA |
Power Dissipation (Max) | 500W (Tc) | 694W (Tc) | 625W (Tc) | 625W (Tc) |
Eroflueden APT14M100B PDF DataDhusts an Microchip Technology Dokumentatioun fir APT14M100B - Microchip Technology.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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