APT14M120B Tech Spezifikatioune
Microchip Technology - APT14M120B technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - APT14M120B
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Vgs (th) (Max) @ Id | 5V @ 1mA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-247 [B] | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 7A, 10V | |
| Power Dissipation (Max) | 625W (Tc) | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 4765 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 1200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Tc) | |
| Basis Produktnummer | APT14M120 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology APT14M120B.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | APT14M120B | APT14M100B | APT14050JVFR | APT14050JVRX |
| Hiersteller | Microchip Technology | Microchip Technology | Microsemi Corporation | |
| Supplier Device Package | TO-247 [B] | TO-247 [B] | ISOTOP® | - |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V | 120 nC @ 10 V | 820 nC @ 10 V | - |
| Entworf fir Source Voltage (Vdss) | 1200 V | 1000 V | 1400 V | - |
| Serie | - | POWER MOS 8™ | POWER MOS V® | - |
| Package / Case | TO-247-3 | TO-247-3 | SOT-227-4, miniBLOC | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Package protegéieren | Tube | Tube | Tube | - |
| Power Dissipation (Max) | 625W (Tc) | 500W (Tc) | 694W (Tc) | - |
| Basis Produktnummer | APT14M120 | APT14M100 | - | - |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 7A, 10V | 900mOhm @ 7A, 10V | 500mOhm @ 11.5A, 10V | - |
| Mounting Type | Through Hole | Through Hole | Chassis Mount | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| FET Feature | - | - | - | - |
| Vgs (Max) | ±30V | ±30V | ±30V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4765 pF @ 25 V | 3965 pF @ 25 V | 13500 pF @ 25 V | - |
| Vgs (th) (Max) @ Id | 5V @ 1mA | 5V @ 1mA | 4V @ 5mA | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Tc) | 14A (Tc) | 23A (Tc) | - |
Eroflueden APT14M120B PDF DataDhusts an Microchip Technology Dokumentatioun fir APT14M120B - Microchip Technology.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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