1N5830 Tech Spezifikatioune
Microchip Technology - 1N5830 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - 1N5830
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 460 mV @ 25 A | |
| Voltage - DC Reverse (Vr) (Max) | 30 V | |
| Technologie | Schottky | |
| Supplier Device Package | DO-203AA (DO-4) | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-203AA, DO-4, Stud |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 125°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 3 mA @ 30 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 25A | |
| Capacitance @ Vr, F. | 1650pF @ 5V, 1MHz | |
| Basis Produktnummer | 1N5830 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology 1N5830.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | 1N5830 | 1N5832 | 1N5832 | 1N5832 |
| Hiersteller | Microchip Technology | GeneSiC Semiconductor | Microchip Technology | Solid State Inc. |
| Capacitance @ Vr, F. | 1650pF @ 5V, 1MHz | - | - | - |
| Supplier Device Package | DO-203AA (DO-4) | DO-5 | DO-5 (DO-203AB) | DO-5 |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Package / Case | DO-203AA, DO-4, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud |
| Voltage - Viru (Vf) (Max) @ Wann | 460 mV @ 25 A | 520 mV @ 40 A | 520 mV @ 40 A | 520 mV @ 40 A |
| Basis Produktnummer | 1N5830 | 1N5832 | 1N5832 | - |
| Operatiounstemperatur - Junction | -65°C ~ 125°C | -65°C ~ 150°C | -65°C ~ 125°C | -65°C ~ 125°C |
| Aktuell - Reverse Leakage @ Vr | 3 mA @ 30 V | 20 mA @ 10 V | 20 mA @ 20 V | 20 mA @ 20 V |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30 V | 20 V | 20 V | 20 V |
| Serie | - | - | - | - |
| Mounting Type | Stud Mount | Chassis, Stud Mount | Stud Mount | Stud Mount |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 25A | 40A | 40A | 40A |
Eroflueden 1N5830 PDF DataDhusts an Microchip Technology Dokumentatioun fir 1N5830 - Microchip Technology.
1N5832GeneSiC SemiconductorDIODE SCHOTTKY 20V 40A DO51N5832Microchip TechnologyDIODE SCHOTTKY 20V 40A DO51N5832Solid State Inc.DIODE SCHOTTKY 20V 40A DO51N5829Microchip TechnologyDIODE SCHOTTKY 20V 25A DO203AA1N5831GeneSiC SemiconductorDIODE SCHOTTKY 35V 25A DO41N5828GeneSiC SemiconductorDIODE SCHOTTKY 40V 15A DO5
1N5829Solid State Inc.DIODE SCHOTTKY 20V 25A DO41N5829GeneSiC SemiconductorDIODE SCHOTTKY 20V 25A DO41N5831Microchip TechnologyDIODE SCHOTTKY 40V 25A DO203AA1N5827GeneSiC SemiconductorDIODE SCHOTTKY 30V 15A DO51N5827Microchip Technology5A SCHOTTKY RECTIFIER1N5831Solid State Inc.DIODE SCHOTTKY 40V 25A DO41N5828Solid State Inc.DIODE SCHOTTKY 40V 15A DO41N5827Solid State Inc.DIODE SCHOTTKY 30V 15A DO41N5830GeneSiC SemiconductorDIODE SCHOTTKY 25V 25A DO41N5828Microchip TechnologyDIODE SCHOTTKY 40V 15A DO203AA1N5830Solid State Inc.DIODE SCHOTTKY 30V 25A DO41N5833Microchip TechnologyDIODE SCHOTTKY 30V 40A DO5| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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