1N5827 Tech Spezifikatioune
Microchip Technology - 1N5827 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - 1N5827
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 770 mV @ 40 A | |
| Voltage - DC Reverse (Vr) (Max) | 30 V | |
| Technologie | Schottky | |
| Supplier Device Package | DO-4 (DO-203AA) | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-203AA, DO-4, Stud |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 2 mA @ 30 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 15A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | 1N5827 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology 1N5827.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | 1N5827 | 1N5826 | 1N5827 | 1N5826 |
| Hiersteller | Microchip Technology | Microchip Technology | Solid State Inc. | GeneSiC Semiconductor |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Mounting Type | Stud Mount | Stud Mount | Stud Mount | Chassis, Stud Mount |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 15A | 15A | 15A | 15A |
| Voltage - DC Reverse (Vr) (Max) | 30 V | 20 V | 30 V | 20 V |
| Supplier Device Package | DO-4 (DO-203AA) | DO-4 (DO-203AA) | DO-4 | DO-5 |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AB, DO-5, Stud |
| Basis Produktnummer | 1N5827 | 1N5826 | - | 1N5826 |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -65°C ~ 125°C | -65°C ~ 150°C |
| Aktuell - Reverse Leakage @ Vr | 2 mA @ 30 V | 2 mA @ 20 V | 10 mA @ 30 V | 10 mA @ 20 V |
| Voltage - Viru (Vf) (Max) @ Wann | 770 mV @ 40 A | 670 mV @ 40 A | 470 mV @ 15 A | 440 mV @ 15 A |
| Serie | - | - | - | - |
| Capacitance @ Vr, F. | - | - | - | - |
Eroflueden 1N5827 PDF DataDhusts an Microchip Technology Dokumentatioun fir 1N5827 - Microchip Technology.
1N5826Microchip Technology5A SCHOTTKY RECTIFIER1N5827Solid State Inc.DIODE SCHOTTKY 30V 15A DO41N5826GeneSiC SemiconductorDIODE SCHOTTKY 20V 15A DO51N5828GeneSiC SemiconductorDIODE SCHOTTKY 40V 15A DO51N5825Solid State Inc.DIODE SCHOTTKY 40V 15A AXIAL1N5827GeneSiC SemiconductorDIODE SCHOTTKY 30V 15A DO51N5829GeneSiC SemiconductorDIODE SCHOTTKY 20V 25A DO41N5825 SS54JINGDAO
1N5825RLGAMI Semiconductor/onsemi1N5829Microchip TechnologyDIODE SCHOTTKY 20V 25A DO203AA1N5828Solid State Inc.DIODE SCHOTTKY 40V 15A DO41N5830GeneSiC SemiconductorDIODE SCHOTTKY 25V 25A DO41N5829Solid State Inc.DIODE SCHOTTKY 20V 25A DO41N5830Solid State Inc.DIODE SCHOTTKY 30V 25A DO41N5828Microchip TechnologyDIODE SCHOTTKY 40V 15A DO203AA
1N5825Microchip TechnologyDIODE SCHOTTKY 40V 5A TOP HAT1N5826Solid State Inc.DIODE SCHOTTKY 20V 15A DO41N5830Microchip TechnologyDIODE SCHOTTKY 30V 25A DO203AA| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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