1N3595 Tech Spezifikatioune
Microchip Technology - 1N3595 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - 1N3595
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 200 mA | |
| Voltage - DC Reverse (Vr) (Max) | 125 V | |
| Technologie | Standard | |
| Supplier Device Package | Axial | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Serie | - | |
| Reverse Recovery Time (trr) | 3 µs |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | Axial | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 1 nA @ 125 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology 1N3595.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | 1N3595 | 1N3595 | 1N3595 | 1N3600 |
| Hiersteller | Microchip Technology | onsemi | Solid State Inc. | NTE Electronics, Inc |
| Voltage - DC Reverse (Vr) (Max) | 125 V | 150 V | 400 V | 50 V |
| Capacitance @ Vr, F. | - | 8pF @ 0V, 1MHz | - | - |
| Mounting Type | Through Hole | Through Hole | - | Through Hole |
| Aktuell - Reverse Leakage @ Vr | 1 nA @ 125 V | 1 nA @ 125 V | - | 100 nA @ 50 V |
| Technologie | Standard | Standard | - | Standard |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | 200mA | - | 200mA |
| Serie | - | - | - | - |
| Package protegéieren | Bulk | Bulk | Bulk | Bag |
| Supplier Device Package | Axial | DO-35 | - | DO-35 |
| Package / Case | Axial | DO-204AH, DO-35, Axial | - | DO-204AH, DO-35, Axial |
| Reverse Recovery Time (trr) | 3 µs | 3 µs | - | 4 ns |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | 175°C (Max) | -65°C ~ 175°C | -65°C ~ 175°C |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 200 mA | 1 V @ 200 mA | - | 1 V @ 200 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed | - | Small Signal =< 200mA (Io), Any Speed |
Eroflueden 1N3595 PDF DataDhusts an Microchip Technology Dokumentatioun fir 1N3595 - Microchip Technology.
1N3570MOTOROLAIGBT Module1N3572MOTOROLAIGBT Module1N3595onsemiDIODE GEN PURP 150V 200MA DO351N3595Solid State Inc.DIODE 400V 35A DO211N3600NTE Electronics, IncDIODE GEN PURP 50V 200MA DO35
1N3600Microchip TechnologyDIODE GEN PURP 50V 200MA DO351N3571MOTOROLAIGBT Module
1N3616RSolid State Inc.DIODE GEN PURP 100V 16A DO41N3615Microchip TechnologyDIODE GEN PURP 50V 16A DO41N3573MOTOROLAIGBT Module1N3616Solid State Inc.DIODE GEN PURP 100V 16A DO41N3595-1JANTXMOTO1N3569MOTOROLAIGBT Module1N3574MOTOROLAIGBT Module1N3615Solid State Inc.DIODE GEN PURP 50V 16A DO41N3595-1Microchip TechnologyDIODE GEN PURP 125V 150MA DO351N3616Microchip TechnologyDIODE GEN PURP 100V 16A DO4
1N3595Fairchild SemiconductorHIGH CONDUCTANCE FAST DIODE| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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