1N3595 Tech Spezifikatioune
Fairchild Semiconductor - 1N3595 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - 1N3595
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 200 mA | |
| Voltage - DC Reverse (Vr) (Max) | 150 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-35 (DO-204AH) | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Serie | - | |
| Reverse Recovery Time (trr) | 3 µs |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AH, DO-35, Axial | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | 175°C (Max) | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 1 nA @ 125 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | |
| Capacitance @ Vr, F. | 8pF @ 0V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor 1N3595.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | 1N3595 | 1N3595-1 | 1N3616 | 1N3600 |
| Hiersteller | Fairchild Semiconductor | Microchip Technology | Solid State Inc. | Microchip Technology |
| Capacitance @ Vr, F. | 8pF @ 0V, 1MHz | - | - | - |
| Operatiounstemperatur - Junction | 175°C (Max) | -65°C ~ 175°C | -65°C ~ 200°C | -65°C ~ 175°C |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | 150mA | 16A | 200mA |
| Reverse Recovery Time (trr) | 3 µs | 3 µs | - | 4 ns |
| Mounting Type | Through Hole | Through Hole | Stud Mount | Through Hole |
| Technologie | Standard | Standard | Standard | Standard |
| Serie | - | - | - | - |
| Voltage - DC Reverse (Vr) (Max) | 150 V | 125 V | 100 V | 50 V |
| Supplier Device Package | DO-35 (DO-204AH) | DO-35 | DO-4 | DO-35 |
| Package protegéieren | Bulk | Bulk | Box | Bulk |
| Aktuell - Reverse Leakage @ Vr | 1 nA @ 125 V | 1 nA @ 125 V | 2.5 µA @ 100 V | 100 nA @ 50 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 200 mA | 1 V @ 200 mA | 1.2 V @ 50 A | 1 V @ 200 mA |
| Package / Case | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-203AA, DO-4, Stud | DO-204AH, DO-35, Axial |
| Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed | Standard Recovery >500ns, > 200mA (Io) | Small Signal =< 200mA (Io), Any Speed |
Eroflueden 1N3595 PDF DataDhusts an Fairchild Semiconductor Dokumentatioun fir 1N3595 - Fairchild Semiconductor.
1N3570MOTOROLAIGBT Module1N3595-1Microchip TechnologyDIODE GEN PURP 125V 150MA DO351N3571MOTOROLAIGBT Module1N3573MOTOROLAIGBT Module1N3616Solid State Inc.DIODE GEN PURP 100V 16A DO41N3572MOTOROLAIGBT Module1N3600Microchip TechnologyDIODE GEN PURP 50V 200MA DO351N3616Microchip TechnologyDIODE GEN PURP 100V 16A DO41N3595Microchip TechnologyDIODE GEN PURP 125V 200MA AXIAL
1N3595onsemiDIODE GEN PURP 150V 200MA DO351N3595-1JANTXMOTO
1N3595Solid State Inc.DIODE 400V 35A DO211N3574MOTOROLAIGBT Module1N3600NTE Electronics, IncDIODE GEN PURP 50V 200MA DO351N3569MOTOROLAIGBT Module1N3615Microchip TechnologyDIODE GEN PURP 50V 16A DO41N3615Solid State Inc.DIODE GEN PURP 50V 16A DO41N34A| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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