US6T7TR Tech Spezifikatioune
Rohm Semiconductor - US6T7TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - US6T7TR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Voltage - Collector Emitter Breakdown (Max) | 30 V | |
| Vce Saturation (Max) @ Ib, Ic | 370mV @ 50mA, 1A | |
| Transistor Type | PNP | |
| Supplier Device Package | TUMT6 | |
| Serie | - | |
| Power - Max | 1 W | |
| Package / Case | 6-SMD, Flat Leads |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 280MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 270 @ 100mA, 2V | |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | |
| Aktuell - Sammler (Ic) (Max) | 1.5 A | |
| Basis Produktnummer | US6T7 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor US6T7TR.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | US6T7TR | US6T6TR | US6T4TR | US6T9/TR |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | LAPIS Technology |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | - |
| Basis Produktnummer | US6T7 | US6T6 | US6T4 | - |
| Serie | - | - | - | - |
| Voltage - Collector Emitter Breakdown (Max) | 30 V | 30 V | 12 V | - |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 270 @ 100mA, 2V | 270 @ 200mA, 2V | 270 @ 500mA, 2V | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| Aktuell - Kollektorat Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) | - |
| Supplier Device Package | TUMT6 | TUMT6 | TUMT6 | - |
| Aktuell - Sammler (Ic) (Max) | 1.5 A | 2 A | 3 A | - |
| Package / Case | 6-SMD, Flat Leads | 6-SMD, Flat Leads | 6-SMD, Flat Leads | - |
| Power - Max | 1 W | 1 W | 1 W | - |
| Frequenz - Iwwergang | 280MHz | 360MHz | 280MHz | - |
| Vce Saturation (Max) @ Ib, Ic | 370mV @ 50mA, 1A | 180mV @ 50mA, 1A | 250mV @ 30mA, 1.5A | - |
| Transistor Type | PNP | PNP | PNP | - |
US6T9/TRLAPIS TechnologyUS6M2 G3/TRLAPIS TechnologyUS6M2 TCRLAPIS TechnologyUS6M2/TRLAPIS TechnologyUS6M11LAPIS TechnologyUS6M2TRRohm SemiconductorMOSFET N/P-CH 30V/20V TUMT6US6M11/TRLAPIS TechnologyUS6T4/TRLAPIS TechnologyUS6M2 G/TRLAPIS TechnologyUS6M11 TCRLAPIS TechnologyUS6T9TRRohm SemiconductorTRANS 2PNP 30V 1A 6UMTUS6M11TRRohm SemiconductorMOSFET N/P-CH 20V/12V TUMT6US6X8/TRLAPIS TechnologyUS6T6TRRohm SemiconductorTRANS PNP 30V 2A TUMT6US6T4TRRohm SemiconductorTRANS PNP 12V 3A TUMT6US6M2TR MOSLAPIS TechnologyUS6U37TRRohm SemiconductorMOSFET N-CH 30V 1.5A TUMT6US6M2GTRRohm Semiconductor2.5V DRIVE NCH+PCH MOSFET, 6 PIN| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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