US6M2TR Tech Spezifikatioune
Rohm Semiconductor - US6M2TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - US6M2TR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 1.5V @ 1mA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TUMT6 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1.5A, 4.5V | |
| Power - Max | 1W | |
| Package / Case | 6-SMD, Flat Leads | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.5V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 30V, 20V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.5A, 1A | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | US6M2 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor US6M2TR.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | US6M2TR | US6M11TR | US6M2GTR | US6T7TR |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 10V | 110pF @ 10V | 80pF @ 10V, 150pF @ 10V | - |
| Power - Max | 1W | 1W | 1W | 1 W |
| Vgs (th) (Max) @ Id | 1.5V @ 1mA | 1V @ 1mA | 1.5V @ 1mA, 2V @ 1mA | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.5V | 1.8nC @ 4.5V | 2.2nC @ 4.5V, 2.1nC @ 4.5V | - |
| Basis Produktnummer | US6M2 | US6M11 | US6M2 | US6T7 |
| Serie | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.5A, 1A | 1.5A, 1.3A | 1.5A, 1A | - |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1.5A, 4.5V | 180mOhm @ 1.5A, 4.5V | 240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| FET Feature | - | Logic Level Gate | - | - |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C | 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 30V, 20V | 20V, 12V | 30V, 20V | - |
| Supplier Device Package | TUMT6 | TUMT6 | TUMT6 | TUMT6 |
| Konfiguratioun | N and P-Channel | N and P-Channel | N and P-Channel | - |
| Package / Case | 6-SMD, Flat Leads | 6-SMD, Flat Leads | 6-SMD, Flat Leads | 6-SMD, Flat Leads |
Eroflueden US6M2TR PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir US6M2TR - Rohm Semiconductor.
US6T7TRRohm SemiconductorTRANS PNP 30V 1.5A TUMT6US6M11TRRohm SemiconductorMOSFET N/P-CH 20V/12V TUMT6US6M2GTRRohm Semiconductor2.5V DRIVE NCH+PCH MOSFET, 6 PINUS6U37TRRohm SemiconductorMOSFET N-CH 30V 1.5A TUMT6US6M2 TCRLAPIS TechnologyUS6M11LAPIS TechnologyUS6T9/TRLAPIS TechnologyUS6M2 G/TRLAPIS TechnologyUS6T4TRRohm SemiconductorTRANS PNP 12V 3A TUMT6US6M11/TRLAPIS TechnologyUS6X8/TRLAPIS TechnologyUS6M11 TCRLAPIS TechnologyUS6T9TRRohm SemiconductorTRANS 2PNP 30V 1A 6UMTUS6T6TRRohm SemiconductorTRANS PNP 30V 2A TUMT6US6M2TR MOSLAPIS TechnologyUS6T4/TRLAPIS TechnologyUS6M2/TRLAPIS TechnologyUS6M2 G3/TRLAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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