RUS100N02TB Tech Spezifikatioune
Rohm Semiconductor - RUS100N02TB technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RUS100N02TB
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 1V @ 1mA | |
| Vgs (Max) | ±10V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOP | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 4.5V | |
| Power Dissipation (Max) | 2W (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Ta) | |
| Basis Produktnummer | RUS100 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RUS100N02TB.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | RUS100N02TB | STD10PF06T4 | SCH1302-TL-E | STB14N80K5 |
| Hiersteller | Rohm Semiconductor | STMicroelectronics | onsemi | STMicroelectronics |
| Basis Produktnummer | RUS100 | STD10 | - | STB14 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6-SMD, Flat Leads | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| FET Typ | N-Channel | P-Channel | P-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 10 V | 850 pF @ 25 V | 410 pF @ 10 V | 620 pF @ 100 V |
| Serie | - | STripFET™ II | - | MDmesh™ K5 |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 4.5V | 200mOhm @ 5A, 10V | 165mOhm @ 1A, 4V | 445mOhm @ 6A, 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Ta) | 10A (Tc) | 2A (Ta) | 12A (Tc) |
| Vgs (Max) | ±10V | ±20V | - | ±30V |
| Supplier Device Package | 8-SOP | DPAK | 6-SCH | D²PAK (TO-263) |
| Power Dissipation (Max) | 2W (Ta) | 40W (Tc) | 800mW (Ta) | 130W (Tc) |
| Entworf fir Source Voltage (Vdss) | 20 V | 60 V | 20 V | 800 V |
| Operatioun Temperatur | 150°C (TJ) | 175°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | 10V | - | 10V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V | 21 nC @ 10 V | 10 nC @ 10 V | 22 nC @ 10 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | 1V @ 1mA | 4V @ 250µA | - | 5V @ 100µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
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NTP52N10onsemiMOSFET N-CH 100V 60A TO220AB| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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