SCH1302-TL-E Tech Spezifikatioune
onsemi - SCH1302-TL-E technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - SCH1302-TL-E
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | - | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 6-SCH | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 1A, 4V | |
| Power Dissipation (Max) | 800mW (Ta) | |
| Package / Case | 6-SMD, Flat Leads | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi SCH1302-TL-E.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | SCH1302-TL-E | SCH1337-TL-W | SCH1337-TL-H | SCH1331-P-TL-H |
| Hiersteller | onsemi | onsemi | Sanyo | onsemi |
| Entworf fir Source Voltage (Vdss) | 20 V | 30 V | 30 V | - |
| Serie | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Ta) | 2A (Ta) | 2A (Ta) | 3A (Tj) |
| Package / Case | 6-SMD, Flat Leads | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 |
| Supplier Device Package | 6-SCH | SOT-563/SCH6 | 6-SCH | 6-SCH |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 1A, 4V | 150mOhm @ 1A, 10V | 150mOhm @ 1A, 10V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 10 V | 172 pF @ 10 V | 172 pF @ 10 V | - |
| FET Feature | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Vgs (th) (Max) @ Id | - | 2.6V @ 1mA | - | - |
| Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
| Power Dissipation (Max) | 800mW (Ta) | 800mW (Ta) | 800mW (Ta) | - |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | - |
| FET Typ | P-Channel | P-Channel | P-Channel | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V | 3.9 nC @ 10 V | 3.9 nC @ 10 V | - |
SCH1304-TL-EAMI Semiconductor/onsemiSCH1305-TL-EonsemiPCH 1.8V DRIVE SERIESSCH1337-TL-WonsemiMOSFET P-CH 30V 2A SOT563/SCH6SCH1342-TL-HAMI Semiconductor/onsemiSCH1337-TL-HSanyoP-CHANNEL MOSFETSCH1331-P-TL-HonsemiMOSFET P-CH 12V 3A SCH6SCH1330-TL-HonsemiMOSFET P-CH 20V 1.5A 6SCHSCH1306-TL-ESanyoP-CHANNEL SILICON MOSFETSCH1334-TL-HonsemiMOSFET P-CH 12V 1.6A 6SCHSCH1333-TL-HonsemiMOSFET P-CH 20V 2A 6SCHSCH1311-TL-EAMI Semiconductor/onsemiSCH1302-S-EAMI Semiconductor/onsemiSCH1210HT150J-GAOBASCH1331-TL-HonsemiMOSFET P-CH 12V 3A 6SCHSCH1335-TL-HonsemiMOSFET P-CH 12V 2.5A 6SCHSCH1331-TL-H#####SCH1331-S-TL-HonsemiMOSFET P-CH 12V 3A SCH6SCH100GB120DN2SiemensIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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