RSE002P03TL Tech Spezifikatioune
Rohm Semiconductor - RSE002P03TL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RSE002P03TL
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | EMT3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 200mA, 10V | |
| Power Dissipation (Max) | 150mW (Ta) | |
| Package / Case | SC-75, SOT-416 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 30 pF @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA (Ta) | |
| Basis Produktnummer | RSE002 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RSE002P03TL.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | RSE002P03TL | RSE002N06TL | NTD85N02R-001 | NTD5406NG |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | onsemi | onsemi |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 2.5V, 10V | 4.5V, 10V | 5V, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | 2.3V @ 1mA | 2V @ 250µA | 3.5V @ 250µA |
| Package / Case | SC-75, SOT-416 | SC-75, SOT-416 | TO-251-3 Short Leads, IPak, TO-251AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
| Power Dissipation (Max) | 150mW (Ta) | 150mW (Ta) | 1.25W (Ta), 78.1W (Tc) | 3W (Ta), 100W (Tc) |
| Supplier Device Package | EMT3 | EMT3 | I-PAK | DPAK |
| Serie | - | - | - | - |
| Basis Produktnummer | RSE002 | RSE002 | NTD85 | NTD54 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA (Ta) | 250mA (Ta) | 12A (Ta), 85A (Tc) | 12.2A (Ta), 70A (Tc) |
| FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 200mA, 10V | 2.4Ohm @ 250mA, 10V | 5.2mOhm @ 20A, 10V | 10mOhm @ 30A, 10V |
| Entworf fir Source Voltage (Vdss) | 30 V | 60 V | 24 V | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 30 pF @ 10 V | 15 pF @ 25 V | 2050 pF @ 20 V | 2500 pF @ 32 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tube |
| FET Feature | - | - | - | - |
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AOD9N50Alpha & Omega Semiconductor Inc.MOSFET N-CH 500V 9A TO252| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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