DMG3418L-7 Tech Spezifikatioune
Diodes Incorporated - DMG3418L-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMG3418L-7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 10V | |
| Power Dissipation (Max) | 1.4W (Ta) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 464.3 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Ta) | |
| Basis Produktnummer | DMG3418 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMG3418L-7.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | DMG3418L-7 | DMG3415UFY4Q-7 | DMG3420UQ-7 | DMG3415UQ-7 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C | -55°C ~ 150°C (TJ) |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 10V | 1.8V, 4.5V | 1.8V, 10V | 1.8V, 4.5V |
| Vgs (Max) | ±12V | ±8V | ±12V | ±8V |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | 1V @ 250µA | 1.2V @ 250µA | 1V @ 250µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | 464.3 pF @ 15 V | 282 pF @ 10 V | 434.7 pF @ 10 V | 294 pF @ 10 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Ta) | 2.5A (Ta) | 5.47A (Ta) | 4A (Ta) |
| Power Dissipation (Max) | 1.4W (Ta) | 650mW (Ta) | 740mW | 900mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4.5 V | 10 nC @ 4.5 V | 5.4 nC @ 4.5 V | 9.1 nC @ 4.5 V |
| FET Typ | N-Channel | P-Channel | N-Channel | P-Channel |
| Entworf fir Source Voltage (Vdss) | 30 V | 16 V | 20 V | 20 V |
| Supplier Device Package | SOT-23-3 | X2-DFN2015-3 | SOT-23-3 | SOT-23-3 |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 10V | 39mOhm @ 4A, 4.5V | 29mOhm @ 6A, 10V | 42.5mOhm @ 4A, 4.5V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| FET Feature | - | - | - | - |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | 3-XDFN | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Serie | - | - | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
| Basis Produktnummer | DMG3418 | DMG3415 | DMG3420 | DMG3415 |
Eroflueden DMG3418L-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMG3418L-7 - Diodes Incorporated.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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