RSD220N06TL Tech Spezifikatioune
Rohm Semiconductor - RSD220N06TL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RSD220N06TL
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | - | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | CPT3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Power Dissipation (Max) | 20W (Ta) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Ta) | |
| Basis Produktnummer | RSD220 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RSD220N06TL.
| Produktiounsattriff |  |
|
|
|
|---|---|---|---|---|
| Part Number | RSD220N06TL | RSD221N06TL | RSD201N10TL | RSD200N05TL |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Basis Produktnummer | RSD220 | RSD221 | RSD201 | RSD200 |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 4V, 10V | 4V, 10V | 4V, 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | - | 3V @ 1mA | 2.5V @ 1mA | 2.5V @ 1mA |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | - | 26mOhm @ 22A, 10V | 46mOhm @ 20A, 10V | 28mOhm @ 20A, 10V |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 100 V | 45 V |
| Supplier Device Package | CPT3 | CPT3 | CPT3 | CPT3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Serie | - | - | - | - |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Power Dissipation (Max) | 20W (Ta) | 850mW (Ta), 20W (Tc) | 850mW (Ta), 20W (Tc) | 20W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Ta) | 22A (Tc) | 20A (Tc) | 20A (Ta) |
RSD220N06LAPIS TechnologyRSD221N06 TLLAPIS TechnologyRSD200N10FRATLLAPIS TechnologyRSD376TE-17LAPIS TechnologyRSD200N10LAPIS TechnologyRSD221N06TLRohm SemiconductorMOSFET N-CH 60V 22A CPT3RSD220N06 TLLAPIS TechnologyRSD201N10TLRohm SemiconductorMOSFET N-CH 100V 20A CPT3RSD201N10LAPIS TechnologyRSD175N10LAPIS TechnologyRSD221N06LAPIS TechnologyRSD221N06FRATLLAPIS TechnologyRSD200N05TLRohm SemiconductorMOSFET N-CH 45V 20A CPT3
RSD23T52MRWOR SUTMRSD160P05FRATLLAPIS TechnologyRSD175N10TLRohm SemiconductorMOSFET N-CH 100V 17.5A CPT3RSD160P05LAPIS TechnologyRSD376 TE-17LAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.