RSD201N10TL Tech Spezifikatioune
Rohm Semiconductor - RSD201N10TL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RSD201N10TL
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | CPT3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 46mOhm @ 20A, 10V | |
Power Dissipation (Max) | 850mW (Ta), 20W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | |
Basis Produktnummer | RSD201 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RSD201N10TL.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RSD201N10TL | RSD220N06TL | RSD221N06TL | RSD200N05TL |
Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
Entworf fir Source Voltage (Vdss) | 100 V | 60 V | 60 V | 45 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | 22A (Ta) | 22A (Tc) | 20A (Ta) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Power Dissipation (Max) | 850mW (Ta), 20W (Tc) | 20W (Ta) | 850mW (Ta), 20W (Tc) | 20W (Tc) |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | - | 3V @ 1mA | 2.5V @ 1mA |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 4V, 10V | 4V, 10V | 4V, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 25 V | - | 1500 pF @ 10 V | 950 pF @ 10 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Supplier Device Package | CPT3 | CPT3 | CPT3 | CPT3 |
Rds On (Max) @ Id, Vgs | 46mOhm @ 20A, 10V | - | 26mOhm @ 22A, 10V | 28mOhm @ 20A, 10V |
Basis Produktnummer | RSD201 | RSD220 | RSD221 | RSD200 |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Serie | - | - | - | - |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | - | 30 nC @ 10 V | 12 nC @ 5 V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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