HP8K22TB Tech Spezifikatioune
Rohm Semiconductor - HP8K22TB technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - HP8K22TB
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
| Technologie | - | |
| Supplier Device Package | 8-HSOP | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V | |
| Power - Max | 25W | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 16.8nC @ 10V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 27A, 57A | |
| Konfiguratioun | 2 N-Channel (Half Bridge) | |
| Basis Produktnummer | HP8K22 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor HP8K22TB.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | HP8K22TB | HP8S36TB | QS8M13TCR | HP8K24TB |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | 2.5V @ 1mA | 2.5V @ 1mA | 2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 15V | 6100pF @ 15V | 390pF @ 10V | 590pF @ 15V, 2410pF @ 15V |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-SMD, Flat Lead | 8-PowerTDFN |
| Gate Charge (Qg) (Max) @ Vgs | 16.8nC @ 10V | 47nC @ 4.5V | 5.5nC @ 5V | 10nC @ 10V, 36nC @ 10V |
| Basis Produktnummer | HP8K22 | HP8S36 | QS8M13 | HP8K24 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 27A, 57A | 27A, 80A | 6A, 5A | 15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc) |
| Technologie | - | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V | 2.4mOhm @ 32A, 10V | 28mOhm @ 6A, 10V | 8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| FET Feature | - | - | Logic Level Gate | - |
| Entworf fir Source Voltage (Vdss) | 30V | 30V | 30V | 30V |
| Konfiguratioun | 2 N-Channel (Half Bridge) | 2 N-Channel (Half Bridge) | N and P-Channel | 2 N-Channel (Dual) Asymmetrical |
| Supplier Device Package | 8-HSOP | 8-HSOP | TSMT8 | 8-HSOP |
| Power - Max | 25W | 29W | 1.5W | 3W (Ta) |
| Serie | - | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden HP8K22TB PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir HP8K22TB - Rohm Semiconductor.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
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| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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