QS8M13TCR Tech Spezifikatioune
Rohm Semiconductor - QS8M13TCR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - QS8M13TCR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TSMT8 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6A, 10V | |
| Power - Max | 1.5W | |
| Package / Case | 8-SMD, Flat Lead | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 390pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A, 5A | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | QS8M13 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor QS8M13TCR.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | QS8M13TCR | QS8J13TR | QS8J2TR | QS8M51TR |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A, 5A | 5.5A | 4A | 2A, 1.5A |
| Konfiguratioun | N and P-Channel | 2 P-Channel (Dual) | 2 P-Channel (Dual) | N and P-Channel |
| Serie | - | - | - | - |
| Basis Produktnummer | QS8M13 | QS8J13 | QS8J2 | QS8M51 |
| Package / Case | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | 1V @ 1mA | 1V @ 1mA | 2.5V @ 1mA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Power - Max | 1.5W | 1.25W | 550mW | 1.5W |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 30V | 12V | 12V | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 390pF @ 10V | 6300pF @ 6V | 1940pF @ 6V | 290pF @ 25V |
| Supplier Device Package | TSMT8 | TSMT8 | TSMT8 | TSMT8 |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate, 1.5V Drive | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6A, 10V | 22mOhm @ 5.5A, 4.5V | 36mOhm @ 4A, 4.5V | 325mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 5V | 60nC @ 4.5V | 20nC @ 4.5V | 4.7nC @ 5V |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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