IXTP10N60PM Tech Spezifikatioune
IXYS - IXTP10N60PM technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTP10N60PM
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5V @ 100µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | Polar | |
Rds On (Max) @ Id, Vgs | 740mOhm @ 5A, 10V | |
Power Dissipation (Max) | 50W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1610 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | |
Basis Produktnummer | IXTP10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTP10N60PM.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXTP10N60PM | IXTP02N50D | IXTP08N100P | IXTP100N04T2 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Input Capacitance (Ciss) (Max) @ Vds | 1610 pF @ 25 V | 120 pF @ 25 V | 240 pF @ 25 V | 2690 pF @ 25 V |
Serie | Polar | Depletion | Polar | TrenchT2™ |
Basis Produktnummer | IXTP10 | IXTP02 | IXTP08 | IXTP100 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package protegéieren | Tube | Tube | Tube | Tube |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V | - | 11.3 nC @ 10 V | 25.5 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Vgs (Max) | ±30V | ±20V | ±20V | ±20V |
Power Dissipation (Max) | 50W (Tc) | 1.1W (Ta), 25W (Tc) | 42W (Tc) | 150W (Tc) |
Entworf fir Source Voltage (Vdss) | 600 V | 500 V | 1000 V | 40 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | 200mA (Tc) | 800mA (Tc) | 100A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Vgs (th) (Max) @ Id | 5V @ 100µA | 5V @ 25µA | 4V @ 50µA | 4V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 740mOhm @ 5A, 10V | 30Ohm @ 50mA, 0V | 20Ohm @ 500mA, 10V | 7mOhm @ 25A, 10V |
FET Feature | - | Depletion Mode | - | - |
Eroflueden IXTP10N60PM PDF DataDhusts an IXYS Dokumentatioun fir IXTP10N60PM - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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