IXTP08N100D2 Tech Spezifikatioune
IXYS - IXTP08N100D2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTP08N100D2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | - | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | Depletion | |
Rds On (Max) @ Id, Vgs | 21Ohm @ 400mA, 0V | |
Power Dissipation (Max) | 60W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 14.6 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | Depletion Mode | |
Fuert Volt (Max Rds On, Min Rds On) | - | |
Entworf fir Source Voltage (Vdss) | 1000 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 800mA (Tc) | |
Basis Produktnummer | IXTP08 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTP08N100D2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXTP08N100D2 | IXTP100N04T2 | IXTP05N100 | IXTN90N25L2 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Mounting Type | Through Hole | Through Hole | Through Hole | Chassis Mount |
FET Feature | Depletion Mode | - | - | - |
Power Dissipation (Max) | 60W (Tc) | 150W (Tc) | 40W (Tc) | 735W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 800mA (Tc) | 100A (Tc) | 750mA (Tc) | 90A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 25 V | 2690 pF @ 25 V | 260 pF @ 25 V | 23000 pF @ 25 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 14.6 nC @ 5 V | 25.5 nC @ 10 V | 7.8 nC @ 10 V | 640 nC @ 10 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Entworf fir Source Voltage (Vdss) | 1000 V | 40 V | 1000 V | 250 V |
Serie | Depletion | TrenchT2™ | - | Linear L2™ |
Vgs (Max) | ±20V | ±20V | ±30V | ±20V |
Vgs (th) (Max) @ Id | - | 4V @ 250µA | 4.5V @ 250µA | 4.5V @ 3mA |
Rds On (Max) @ Id, Vgs | 21Ohm @ 400mA, 0V | 7mOhm @ 25A, 10V | 17Ohm @ 375mA, 10V | 33mOhm @ 500mA, 10V |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | SOT-227-4, miniBLOC |
Basis Produktnummer | IXTP08 | IXTP100 | IXTP05 | IXTN90 |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | SOT-227B |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | - | 10V | 10V | 10V |
Eroflueden IXTP08N100D2 PDF DataDhusts an IXYS Dokumentatioun fir IXTP08N100D2 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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